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Publikováno v:
Materials Chemistry and Physics. 61:266-269
Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ed6842addfcba19c70fa19a4544b53
https://doi.org/10.1016/s0254-0584(99)00146-7
https://doi.org/10.1016/s0254-0584(99)00146-7
Publikováno v:
IEEE Transactions on Electron Devices. 43:1181-1186
GaAs field-effect transistors (FET's) utilizing multiple /spl delta/-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-/spl delta/-doping profiles were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c1376953065884dfa317ec9ddd87d6
https://doi.org/10.1109/16.506766
https://doi.org/10.1109/16.506766
Publikováno v:
IEEE Transactions on Electron Devices. 42:804-809
An inverted delta-modulation-doped (IDMD) GaAs/InGaAs pseudomorphic heterostructure grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is demonstrated and discussed. The respective influences of delta-doping period and spacer thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93b94fe7f9262c402a1f6b6591769447
https://doi.org/10.1109/16.381973
https://doi.org/10.1109/16.381973
Publikováno v:
Solid-State Electronics. 38:433-436
Depletion-MIS-like GaAs/In 0.25 Ga 0.75 As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7622a722745f63494d9e77816b2f347
https://doi.org/10.1016/0038-1101(94)e0078-s
https://doi.org/10.1016/0038-1101(94)e0078-s
Publikováno v:
Applied Physics Letters. 80:1882-1884
Real index-guided buried ridge InGaAlP 650 nm band lasers with p+–n+ buried tunnel junctions are demonstrated. Located on top of the buried ridges, the tunnel junctions, made of InGaAs/GaAs superlattices with modulation doping, were introduced as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b02aa4de8f3780a6a57deecfebeb6a0a
https://doi.org/10.1063/1.1459763
https://doi.org/10.1063/1.1459763
Publikováno v:
Solid-State Electronics. 36:1143-1146
The δ- and homogeneously-doped high electron mobility transistor (HEMTs) employing a graded In x Ga 1− x As quantum well as the active channel grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were studied qualitatively. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d29dd157954fbb1268cfc185743810c
https://doi.org/10.1016/0038-1101(93)90194-u
https://doi.org/10.1016/0038-1101(93)90194-u
Publikováno v:
IEEE Transactions on Electron Devices. 40:1630-1635
Significant improvements in gate voltage swings in heterostructures prepared by low-pressure metalorganic chemical vapor deposition are discussed. Structures utilizing a compositionally graded In/sub x/Ga/sub 1-x/As channel exhibited a very flat tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a5dad2d5612d03849a3f533e4ec93e
https://doi.org/10.1109/16.231568
https://doi.org/10.1109/16.231568
Publikováno v:
Applied Physics Letters. 78:853-855
A two-wavelength integrated laser diode (TWINLD) with aluminum-free active areas (AAA) has been realized by monolithically combining two different laser material structures in a single chip utilizing the metalorganic chemical vapor deposition growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4831a10e383fd3c77f0a5ada96027892
https://doi.org/10.1063/1.1347019
https://doi.org/10.1063/1.1347019
Publikováno v:
Journal of Crystal Growth. 121:665-670
Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH 4 doped in Al x Ga 1- x As rich in Al( x > 0.2) is discussed in detail. The electron carrier concentration has been raised abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac28f9939cf7287299b5de2a51a62362
https://doi.org/10.1016/0022-0248(92)90573-2
https://doi.org/10.1016/0022-0248(92)90573-2