Origin of energy dispersion in AlxGa1−xNÕGaN nanowire quantum discs with low Al content

Autor: Rigutti, L., Teubert, J., Jacopin, G., Fortuna, F., Tchernycheva, M., De Luna Bugallo, A., H. Julien, F., Furtmayr, F., Stutzmann, M., Eickhoff, M.

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82, pp.235308. ⟨10.1103/PhysRevB.82.235308⟩

Individual GaN nanowires containing AlxGa1−xN/GaN quantum discs QDiscs with Al content x16% have been investigated by microphotoluminescence, transmission electron microscopy, and theoretical modeling. Single quantum discs show narrow emission line

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9a80e38f1f9d54904a7c0d6e05b34668
http://hal.in2p3.fr/in2p3-00577207

Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(001)

Autor: Fossard, F., Helman, A., H. Julien, F., Gendry, M., Brault, J., Peronne, Emmanuel, Alexandrou, Antigoni, Schacham, S.E., Finkman, E.

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures
Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.82. ⟨10.1016/S1386-9477(02)00779-8⟩
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2003, 17, pp.82. ⟨10.1016/S1386-9477(02)00779-8⟩

InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5a5dda787e5297b7bc9e0195622a96ba
https://hal.science/hal-00017632

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices.

Autor: Yan, Xin, Li, Yao, Zhang, Xia

Publikováno v: Nanoscale Horizons; Jan2025, Vol. 10 Issue 1, p56-77, 22p

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure.

Autor: Zhao, Xiaoyu, Sun, Ke, Cui, Siyuan, Tang, Bin, Hu, Hongpo, Zhou, Shengjun

Publikováno v: Advanced Photonics Research; Sep2023, Vol. 4 Issue 9, p1-16, 16p

Intersubband resonant enhancement of second order-nonlinear susceptibility in asymmetric AlxGa1−xN/GaN double quantum wells.

Autor: Saidi, Imen

Publikováno v: Journal of Applied Physics; 10/7/2019, Vol. 126 Issue 13, pN.PAG-N.PAG, 13p, 1 Diagram, 1 Chart, 11 Graphs