Zobrazeno 1 - 10
of 294
pro vyhledávání: '"H Heinecke"'
Publikováno v:
Journal of Crystal Growth. 209:424-430
The growth parameter dependence of the transition from 2D to 3D growth of GaInAsP multiple quantum well (MQW) structures up to e B =0.5% tensile-strained barriers was examined. Identical MQW structures with e W =1% compressively strained wells were g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db5b860054cc7f6324b7292189968fd
https://doi.org/10.1016/s0022-0248(99)00584-9
https://doi.org/10.1016/s0022-0248(99)00584-9
Publikováno v:
Journal of Crystal Growth. 195:660-667
For industrial device fabrication gaseous dopant sources are preferred in metalorganic growth technologies. Both in metalorganic vapor phase epitaxy (MOVPE) and metalorganic molecular beam epitaxy (MOMBE/CBE) diethylzinc is used. For doping of InP ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08561c232b7924d82c1cc5083fb5089
https://doi.org/10.1016/s0022-0248(98)00642-3
https://doi.org/10.1016/s0022-0248(98)00642-3
Publikováno v:
Journal of Crystal Growth. 195:510-515
GaInAsP-ridges with vertical side-walls can be achieved by metalorganic molecular beam epitaxy (MOMBE) when using substrates with misorientated surfaces. The anisotropic surface diffusion of group III growth species leads to a different material comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::173fca5bda3cf4babb976f8e9a449c45
https://doi.org/10.1016/s0022-0248(98)00732-5
https://doi.org/10.1016/s0022-0248(98)00732-5
Autor:
B. Splingart, H. Heinecke, J. Schneider, M. Demmler, M. Birk, K.-M. Lipka, Paul J. Tasker, P. Schmid, Erhard Kohn
Publikováno v:
Microelectronics Reliability. 38:1795-1801
A novel FET concept, using low temperature grown GaAs as surface passivation and buffer layer material, has been developed to tolerate high levels of input overdrive and to improve electrostatic discharge (ESD) resistance. It is shown that high input
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ca1e38a2f0de27b0f51576169b051b8
https://doi.org/10.1016/s0026-2714(98)00182-6
https://doi.org/10.1016/s0026-2714(98)00182-6
Publikováno v:
Journal of Crystal Growth. 188:168-175
In Metal Organic Molecular Beam Epitaxy (MOMBE) the selective area epitaxy (SAE) of double heterostructures (DH) lasers was investigated by using as group V starting materials tertiarybutylarsine/tertiarybutylphosphine (TBAs/TBP), ditertiarybutylarsi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::706788d90093c25756f1fbdb4eae982c
https://doi.org/10.1016/s0022-0248(98)00092-x
https://doi.org/10.1016/s0022-0248(98)00092-x
Autor:
B. Marheineke, M Aigle, J Porsche, J.M. Schneider, Rolf Sauer, Wolfgang Limmer, J. Gerster, H. Heinecke
Publikováno v:
Journal of Crystal Growth. 188:225-230
Micro-Raman spectroscopy has been utilized to determine the local material composition of an In x Ga 1-x As layer and the local free-charge-carrier concentration of a Si-doped InP layer grown on patterned InP(100) substrates. The layers exhibited 8 o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f50165b549c11a453d693c0d0736da
https://doi.org/10.1016/s0022-0248(98)00079-7
https://doi.org/10.1016/s0022-0248(98)00079-7
Dopant incorporation behaviour during MOMBE growth of InP on (1 0 0), {1 1 1} and nonplanar surfaces
Publikováno v:
Journal of Crystal Growth. 188:183-190
The doping of InP using Si and Zn has been studied for MOMBE growth on (1 0 0), (1 1 1)A, (1 1 1)B and for the overgrowth of nonplanar surfaces. The investigation of large area growth shows that Si acts as a donor on the three investigated surfaces.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e86373ca25a5d4166030095124b6c5c
https://doi.org/10.1016/s0022-0248(98)00095-5
https://doi.org/10.1016/s0022-0248(98)00095-5
Publikováno v:
Journal of Crystal Growth. 188:266-274
For applications in long wavelength MQW lasers, GaInAsP/InP heterostructures were grown by metalorganic molecular beam epitaxy (MOMBE or CBE). The growth process was performed with all gaseous sources for group III, group V and dopant precursors. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::259dcc906c277cd47e9637b6113ef331
https://doi.org/10.1016/s0022-0248(98)00065-7
https://doi.org/10.1016/s0022-0248(98)00065-7
Publikováno v:
Journal of Crystal Growth. 188:152-158
The growth of high purity InP layers using trimethylindium (TMIn) and different commercial tertiarybutylphosphine (TBP) batches as well as ditertiarybutylphosphine (DTBP) as a new phosphorous precursor was studied in a production type metalorganic mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34e07b680119826495f854859e34982b
https://doi.org/10.1016/s0022-0248(98)00088-8
https://doi.org/10.1016/s0022-0248(98)00088-8
Publikováno v:
Journal of Crystal Growth. 188:247-254
In this study we investigated the material incorporation efficiencies in GaInAsP and InAsP layers grown on InP substrates for large area metalorganic molecular-beam epitaxy (MOMBE). We found an optimum growth temperature for the quaternary material (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0770268fa00111f2e279e3aa5ccd7cb2
https://doi.org/10.1016/s0022-0248(98)00052-9
https://doi.org/10.1016/s0022-0248(98)00052-9