Zobrazeno 1 - 3
of 3
pro vyhledávání: '"H H J M Niederer"'
Publikováno v:
Journal of Physics C: Solid State Physics. 14:4167-4175
The temperature dependence of the conductance of an n-type inversion layer on a (100) silicon surface has been examined between 1.4K and 4.2K at electron densities at which the Fermi level is close above the mobility edge of the lowest sub-band. It c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::676db4b4ff43537524d0e67354bed274
https://doi.org/10.1088/0022-3719/14/28/017
https://doi.org/10.1088/0022-3719/14/28/017
Publikováno v:
Applied Physics Letters. 23:41-42
The peaks in the microwave emission intensity from InSb, at 4.2 K, observed at distinct values of the applied magnetic field as reported by Bekefi et al., are explained in terms of magnetophonon resonances in the acoustoelectric amplification.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25235015b885b83f9f284d5e5299594
https://doi.org/10.1063/1.1654730
https://doi.org/10.1063/1.1654730
Autor:
H. H. J. M. Niederer
Publikováno v:
Japanese Journal of Applied Physics. 13:339
The transverse magnetoconductance of a n-type inverted (100) silicon surface was measured at 4.2 K and up to 7.5 Tesla in order to examine the dependence of the amplitude of its oscillatory part on the surface electron density and on the magnetic fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a47955b6892fc0b852b64c23604c56e
https://doi.org/10.7567/jjaps.2s2.339
https://doi.org/10.7567/jjaps.2s2.339