Zobrazeno 1 - 10
of 98
pro vyhledávání: '"H G Owen"'
Autor:
Ehud Fuchs, James H. G. Owen, Afshin Alipour, Emma L. Fowler, S.O. Reza Moheimani, John N. Randall
Publikováno v:
Novel Patterning Technologies 2023.
Autor:
Robert E. Butera, Shashank Misra, Andrew Baczewski, John N. Randall, Steven M. Rinaldi, James H. G. Owen, Ezra Bussmann
Publikováno v:
MRS Bulletin. 46:607-615
A materials synthesis method that we call atomic-precision advanced manufacturing (APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic precision, is making an impact as a powerful prototyping tool for quantum co
Publikováno v:
Journal of Vacuum Science & Technology B. 40
In this work, atomic-resolution lithography with a Microelectromechanical-System (MEMS) based Scanning Tunneling Microscope (STM) is demonstrated for the first time. The microscope consists of a commercial UltraHigh-Vacuum (UHV) STM whose regular tip
Autor:
Alexander Reum, Daniel F. Feezell, Stephan Mecholdt, Mahmoud Behzadirad, John N. Randall, Tito Busani, Ashwin K. Rishinaramangalam, Joshua B. Ballard, Teodor Gotszalk, James H. G. Owen, Ivo W. Rangelow
Publikováno v:
Nano letters. 21(13)
A fundamental understanding and advancement of nanopatterning and nanometrology are essential in the future development of nanotechnology, atomic scale manipulation, and quantum technology industries. Scanning probe-based patterning/imaging technique
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
Hydrogen Depassivation Lithography (HDL) is a version of electron beam lithography that uses scanning tunneling microscope (STM) instrumentation to expose a self–developing resist that is a monolayer of H chemisorbed to a Si (100) 2x1 H-passivated
Autor:
Jeffrey A. Ivie, Ezra Bussmann, Quinn Campbell, R Santini, Andrew Baczewski, Scott W. Schmucker, Shashank Misra, John N. Randall, James H. G. Owen
Publikováno v:
Journal of Physics: Condensed Matter. 33:464001
Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desi
Publikováno v:
Journal of Vacuum Science & Technology B. 39:040603
In this article, we replace the Z axis of the piezotube of a conventional Ultrahigh-Vacuum (UHV) Scanning Tunneling Microscope (STM) with a one-degree-of-freedom Microelectromechanical-System (MEMS) nanopositioner. As a result, a hybrid system is rea
Publikováno v:
Journal of Vacuum Science & Technology B. 39:042802
A scanning tunneling microscope (STM) combines unique capabilities in imaging and spectroscopy with atomic precision, and it can obtain energy-resolved spectroscopic data with atomic resolution. In this paper, we utilize a recently proposed modificat
Autor:
James H. G. Owen, Wiley P. Kirk
Publikováno v:
2D Quantum Metamaterials.
Exciting developments in strategic areas of science and engineering makes for possible new engineered structures identified as quantum metamaterials. These new structures offer unusual properties that involve fundamental concepts such as entangled qu