Zobrazeno 1 - 10
of 570
pro vyhledávání: '"H G Owen"'
Autor:
C. R. C. Paul
Publikováno v:
Geological Journal. 19:300-302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2aaabc3526a7bbd414ebd1d9e963fef
https://doi.org/10.1002/gj.3350190309
https://doi.org/10.1002/gj.3350190309
Autor:
Keast, Allen
Publikováno v:
The Quarterly Review of Biology, 1985 Sep 01. 60(3), 386-387.
Externí odkaz:
https://www.jstor.org/stable/2828609
Autor:
Ehud Fuchs, James H. G. Owen, Afshin Alipour, Emma L. Fowler, S.O. Reza Moheimani, John N. Randall
Publikováno v:
Novel Patterning Technologies 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572af1bd5aa0cb241db06b9d90d31658
https://doi.org/10.1117/12.2661599
https://doi.org/10.1117/12.2661599
Autor:
Robert E. Butera, Shashank Misra, Andrew Baczewski, John N. Randall, Steven M. Rinaldi, James H. G. Owen, Ezra Bussmann
Publikováno v:
MRS Bulletin. 46:607-615
A materials synthesis method that we call atomic-precision advanced manufacturing (APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic precision, is making an impact as a powerful prototyping tool for quantum co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d9c33ed6bf3939bfc12ccd5ee675ad
https://doi.org/10.1557/s43577-021-00139-8
https://doi.org/10.1557/s43577-021-00139-8
Autor:
A. Hallam
Publikováno v:
Geological Magazine. 121:653-655
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77c553b8a54c485580e71bc5869b166f
https://doi.org/10.1017/s0016756800030831
https://doi.org/10.1017/s0016756800030831
Publikováno v:
Journal of Vacuum Science & Technology B. 40
In this work, atomic-resolution lithography with a Microelectromechanical-System (MEMS) based Scanning Tunneling Microscope (STM) is demonstrated for the first time. The microscope consists of a commercial UltraHigh-Vacuum (UHV) STM whose regular tip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb9db4061bd55d1996f251141ff5998
https://doi.org/10.1116/6.0001826
https://doi.org/10.1116/6.0001826
Autor:
Alexander Reum, Daniel F. Feezell, Stephan Mecholdt, Mahmoud Behzadirad, John N. Randall, Tito Busani, Ashwin K. Rishinaramangalam, Joshua B. Ballard, Teodor Gotszalk, James H. G. Owen, Ivo W. Rangelow
Publikováno v:
Nano letters. 21(13)
A fundamental understanding and advancement of nanopatterning and nanometrology are essential in the future development of nanotechnology, atomic scale manipulation, and quantum technology industries. Scanning probe-based patterning/imaging technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e530c15a91feabc97b2e04064928fcba
https://pubmed.ncbi.nlm.nih.gov/34192467
https://pubmed.ncbi.nlm.nih.gov/34192467
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
Hydrogen Depassivation Lithography (HDL) is a version of electron beam lithography that uses scanning tunneling microscope (STM) instrumentation to expose a self–developing resist that is a monolayer of H chemisorbed to a Si (100) 2x1 H-passivated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c05ebbbcb8dee32abb5807750b2e31a5
https://doi.org/10.1117/12.2552083
https://doi.org/10.1117/12.2552083
Publikováno v:
Journal of Vacuum Science & Technology B. 37:061605
In top down nanofabrication research facilities around the world, the direct-write high-resolution patterning tool of choice is overwhelmingly electron beam lithography. Remarkably small features can be written in a variety of polymeric resists [V. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dddef4cf4f905913670b47f73fc3c937
https://doi.org/10.1116/1.5119392
https://doi.org/10.1116/1.5119392
Autor:
Jeffrey A. Ivie, Ezra Bussmann, Quinn Campbell, R Santini, Andrew Baczewski, Scott W. Schmucker, Shashank Misra, John N. Randall, James H. G. Owen
Publikováno v:
Journal of Physics: Condensed Matter. 33:464001
Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d5c2eeda48d0292c8bd4493bd96b642
https://doi.org/10.1088/1361-648x/ac1ddf
https://doi.org/10.1088/1361-648x/ac1ddf