Výsledky vyhledávání - "H G Grimmeiss"

Si1−x−yGexCy: a new material for future microelectronics?

Autor: H G Grimmeiss, J Olajos

Publikováno v: Physica Scripta. :52-59

The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterobipolar transistor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::53c264316729926bbf6af70e7afa9bec
https://doi.org/10.1088/0031-8949/1997/t69/007

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Metastable states of Si donors in AlxGa1−xAs

Autor: Y. B. Jia, H. G. Grimmeiss

Publikováno v: Journal of Applied Physics. 80:4395-4399

Donor related states in Si‐doped AlGaAs with Al compositions ranging from 0.30 to 0.59 were investigated by capacitance measurements. In addition to the stable Si‐DX state, two metastable states of the silicon donor were observed. Of the two meta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a49859a17b92b80972bff94ee74fcfe
https://doi.org/10.1063/1.363399

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Photoexcited states ofDXcenters in Si doped AlxGa1−xAs

Autor: H. G. Grimmeiss, Y. B. Jia

Publikováno v: Journal of Applied Physics. 80:3493-3503

Deep level transient spectroscopy (DLTS) and single shot capacitance techniques were used to investigate Si doped AlxGa1−xAs with Al compositions ranging from 0.30 to 0.59. Under illumination, an additional DLTS peak was observed in samples with Al

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::53a2487f79d6c5ed17d435db36d863bb
https://doi.org/10.1063/1.363637

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Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices

Autor: L. Dobaczewski, Y. B. Jia, H. G. Grimmeiss, Z. Y. Han

Publikováno v: Journal of Applied Physics. 80:2860-2865

Uniformly Si doped GaAs/Al0.33Ga0.67As multilayer structures have been studied by deep level transient spectroscopy (DLTS) and photocapacitance measurements. DLTS spectra showed five peaks which are related to defects in the GaAs layers. The concentr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::97d21e4d9d5df773635ec8c20677939c
https://doi.org/10.1063/1.363137

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The excitation spectrum of the trigonal and the orthorhombic FeIn centres in silicon

Autor: P Tidlund, H G Grimmeiss, Mats Kleverman

Publikováno v: Semiconductor Science and Technology. 11:748-752

Excitation spectra of trigonal and orthorhombic FeIn pairs in silicon have been studied by Fourier transform spectroscopy. The spectra were identified as due to hole transitions from the deep ground state to shallow hole states. The orthorhombic conf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1937935647e15fccc7e263b908742f39
https://doi.org/10.1088/0268-1242/11/5/016

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Difficulties in Doping SiGe Alloys with Transition Metal Point Defects

Autor: H. G. Grimmeiss, G. Kissinger

Publikováno v: Physica Status Solidi (a). 145:K5-K9

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0c616573b4c4aaa8a697d46058210e2
https://doi.org/10.1002/pssa.2211450249

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Electrical field dependence of the emission properties of DX-related centres in AlGaAs

Autor: Y B Jia, H G Grimmeiss

Publikováno v: Semiconductor Science and Technology. 9:356-363

The electrical field dependence of the emission properties of DX-related centres in silicon-doped AlxGa1-xAs was studied by applying the measurement technique of reverse-bias pulsed deep-level transient spectroscopy (RDLTS) previously suggested by Li

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbcef0b5ce84c9cd186475b689f93b11
https://doi.org/10.1088/0268-1242/9/4/004

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Autor: P. O. Hansson, H. G. Grimmeiss, L. P. Tilly

Publikováno v: Physical Review B. 47:1249-1255

High-purity In 0.53 Ga 0.47 As lattice matched to InP was grown by liquid-phase epitaxy and used for the study of Cu-related defects. The samples had a free-electron carrier concentration of n=5.0×10 14 cm -3 and an electron mobility of μ 77 K =44

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a743ead58da213b3d21fd9307c5da6f8
https://doi.org/10.1103/physrevb.47.1249

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Transient current measurements for the characterization of deep defects in semiconductors

Autor: H G Grimmeiss, E Meijer

Publikováno v: Semiconductor Science and Technology. 7:188-197

Recharging of defects in the space-charge region of a diode generates in general a current transient which often is used for the characterization of the defects involved. The current of such transients is distributed between a measurable external cur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf424a4431f56b5b87ef4c1f2a0a1d41
https://doi.org/10.1088/0268-1242/7/2/003

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Elektrolumineszenz in III–V-Verbindungen

Autor: H. G. Grimmeiss

Publikováno v: Advances in Solid State Physics ISBN: 9783540753179

A survey is given of the present state of electroluminescence in III–V-compounds with particular respect to injection luminescence. First some possible mechanisms for the excitation of charge carriers by an electric field are discussed, mainly for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8fce81668c91228578e43457533d9814
https://doi.org/10.1007/bfb0119277

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