Zobrazeno 1 - 10
of 44
pro vyhledávání: '"H G Graf"'
Nowadays, miniaturized digital image sensors are present in various applications ranging from consumer products such as camera phones to scientific and medical instruments. Because of the rapid reduction of structure size in semiconductor technology,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb4c6eb6eadaa195b234e4838bbfb3a
https://doi.org/10.1016/b978-0-12-803581-8.00560-9
https://doi.org/10.1016/b978-0-12-803581-8.00560-9
Autor:
T. Engelhardt, Harald Richter, Christine Harendt, H.-G. Graf, Cor Scherjon, Karsten Warkentin, Joachim N. Burghartz
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:281-289
Apart from the ongoing debate about using CMOS active pixel sensors (APS) or CCD imagers for today's consumer and commercial applications the emerging biomedical market presents new opportunities to CMOS APS. Logarithmic response high-dynamic range C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc7b40027979b10a42e89eb3d640495
https://doi.org/10.1109/jssc.2008.2007437
https://doi.org/10.1109/jssc.2008.2007437
Publikováno v:
Materials Science and Engineering: B. 29:13-17
Burying SiO 2 layers into silicon substrates by silicon direct bonding is one of the most promising substrate technologies for increasing the high-temperature capability of smart power devices for high-temperature applications. Leakage currents are s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f04a8e72074ef22b6ab9f519a1ca6a2
https://doi.org/10.1016/0921-5107(94)04031-x
https://doi.org/10.1016/0921-5107(94)04031-x
Publikováno v:
IEEE Micro. 13:50-56
The performance and architecture of a high dynamic range camera (HDRC) chip and the conceptional advantages for its adaptation to image processing systems in traffic environments are discussed. The HDRC chip was developed with 64*64 pixels using a st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18570809d861b00750cfe1e710a98c21
https://doi.org/10.1109/40.210524
https://doi.org/10.1109/40.210524
Publikováno v:
Journal of Micromechanics and Microengineering. 2:113-116
The basic principles of wafer fusion bonding including pretreatment, room temperature mating, and thermal annealing are presented. Techniques for the characterization of the bond quality are reviewed. Results for fusion bonding of other materials suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f29e486e7aedd52eecaa52fa586619b
https://doi.org/10.1088/0960-1317/2/3/001
https://doi.org/10.1088/0960-1317/2/3/001
Publikováno v:
Microelectronic Engineering. 19:153-156
Silicon direct bonding (SDB) has been used to produce silicon-on-insulator (SOI) substrates for dielectrically isolated power devices. The up-drain VDMOS transistors give a low specific on-resistance and allow multiple isolated outputs. The CMOS devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73cc8a9423fcd8830f237a1af71d4fd4
https://doi.org/10.1016/0167-9317(92)90412-k
https://doi.org/10.1016/0167-9317(92)90412-k
Publikováno v:
Journal of Micromechanics and Microengineering. 1:145-151
The principles of the wafer fusion bonding technique at room temperature and with thermal treatment are described. Experiments using plain and patterned silicon wafers coated with different surface materials are presented. Results obtained for differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70dd37b0d5f4120a46568dfdeda7f98
https://doi.org/10.1088/0960-1317/1/3/003
https://doi.org/10.1088/0960-1317/1/3/003
Publikováno v:
IEEE Transactions on Electron Devices. 38:1655-1659
A novel LDMOS transistor structure with breakdown voltages above 100 V has been fabricated in silicon-on-insulator-on-silicon (SOIS). This structure has been fabrication by silicon direct bonding (SDB) and etch-back to a typical film thickness of 1 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47c271606968f2e43db65cff9abf68e4
https://doi.org/10.1109/16.85163
https://doi.org/10.1109/16.85163
Autor:
Karsten Warkentin, Harald Richter, T. Engelhardt, H.-G. Graf, Joachim N. Burghartz, Cor Scherjon, Christine Harendt
Publikováno v:
ISSCC
Presented is the design and characteristics of the first CMOS imager chip that has been implanted into a patient's eye with demonstration of partially-restored vision. Also presented and discussed are the design and characteristics of the first minia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c920d8f620ee8535789c6fa71c86249b
https://doi.org/10.1109/isscc.2008.4523097
https://doi.org/10.1109/isscc.2008.4523097
Autor:
K. Kobuch, V. R. Gabel, E. Zrenner, M. Graf, Bernd Hoefflinger, W. Nisch, M. Stelzle, Alfred Stett, H. Sachs, H. G. Graf, B. Brunner, H. Haemmerle, Stefan Weiss, K.-D. Miliczek
Publikováno v:
Retinal Degenerative Diseases and Experimental Therapy ISBN: 9780306461934
The feasibility of a retinal prosthesis for the blind has been discussed since the 1950s. Early attempts to realize a subretinal implantable prosthesis suffered from technical and microsurgical limitations at that time. Nowadays these problems can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86a588fb037a4bed07f2ec6491f2957
https://doi.org/10.1007/978-0-585-33172-0_47
https://doi.org/10.1007/978-0-585-33172-0_47