Zobrazeno 1 - 10
of 436
pro vyhledávání: '"H Estrade-Szwarckopf"'
Autor:
Pierre Ranson, Xavier Mellhaoui, Mohamed Boufnichel, R Benoit, Philippe Lefaucheux, A Basillais, H Estrade-Szwarckopf, Remi Dussart, G. Marcos, Thomas Tillocher
Publikováno v:
Journal of Micromechanics and Microengineering. 14:190-196
Passivation mechanisms of Si trenches involved in SF6/O2 cryogenic plasma etching were investigated in order to better control the process and avoid defects. Trench sidewalls and profiles were ex situ characterized geometrically by SEM and chemically
Publikováno v:
Applied Physics A. 77:591-597
Surface defects are generated by an Ar plasma on crystalline graphite. In situ scanning tunneling microscopy reveals localized defects surrounded by a R30° superstructure (Friedel’s charge oscillations) for short treatment times and long-range dis
Autor:
H Estrade-Szwarckopf, B Rousseau
Publikováno v:
Solid State Communications. 126:583-587
New results obtained with XPS and UPS on ternary Na–halogen–graphite intercalation compounds (GICs) complement previous ones obtained on binary alkali- and ternary alkali–oxygen–GICs yet published, to give a general overview about what can be
Autor:
Pascal Brault, Anne-Lise Thomann, Bernard Rousseau, A. Berthet, Claude Mirodatos, F. Monnet, Pascal Andreazza, C. Andreazza, J.P. Rozenbaum, Christine Charles, Jean-Claude Bertolini, H. Estrade-Szwarckopf, Roderick Boswell, F.J. Cadete Santos Aires
Publikováno v:
Pure and Applied Chemistry. 74:471-474
Plasma sputter deposition is introduced in the field of catalyst preparation. It is shown that growth kinetics and morphologies are determined by ion to neutral flux ratio and kinetic energies of sputtered atoms. Catalytic activity of such catalysts
Autor:
H. Estrade-Szwarckopf, S. Huet, A. Hadjadj, P. Roca i Cabarrocas, S. Schelz, Laifa Boufendi, B. Rousseau
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:529-535
The crystallization of hydrogenated nanostructured silicon (ns-Si:H) films deposited from Ar-silane mixture in a low-pressure pulsed radio-frequency glow discharge has been studied in relation with their structural and morphological properties. Diffe
Publikováno v:
Carbon
Carbon, 2000, 38 (3), pp.407-422. ⟨10.1016/S0008-6223(99)00120-7⟩
Carbon, 2000, 38 (3), pp.407-422. ⟨10.1016/S0008-6223(99)00120-7⟩
International audience; Activated carbon fibres are new adsorbents, which seem very promising for air or water treatment. In this work, rayon fibres which have been carbonized and activated in the form of woven cloths, are studied by means of two kin
Publikováno v:
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals. 310:231-236
XPS, UPS and STM are used to characterize a second stage NaOxCy compound. The charge distribution and the cleavage localization are discussed.
Autor:
A.L. Thomann, Claude Laure, A. Naudon, Bernard Rousseau, Pascal Brault, H. Estrade-Szwarckopf, C. Andreazza-Vignolle, Pascal Andreazza
Publikováno v:
Surface and Coatings Technology. 98:1228-1232
In this work we studied the deposition of Pd on a silicon surface by a non-conventional plasma assisted deposition technique. The Pd source is a negatively biased Pd wire located in the deposition chamber and sputtered by the plasma ions. Emission sp
Autor:
G. Blondiaux, Pascal Andreazza, C. Andreazza-Vignolle, Pascal Brault, J.P. Rozenbaum, David Babonneau, Bernard Rousseau, H. Estrade-Szwarckopf, A.L. Thomann
Publikováno v:
Journal of Physics D: Applied Physics. 30:3197-3202
In this work, the synthesis of supported Pd aggregates by plasma sputter deposition is studied. A helicoidal metal wire is negatively biased with respect to the plasma potential, which results in sputtering of the metal by the argon ions present in t
Publikováno v:
Solid State Communications. 99:143-147
The surface of a Cs-Graphite Intercalation Compound (stage 1) has been studied by UPS and XPS under controlled oxygen atmosphere. The evolution of this surface is compared with that of usual Cs thin films. In spite of the presence of half a Cs monola