Zobrazeno 1 - 10
of 93
pro vyhledávání: '"H D, Liess"'
Autor:
H. D. Liess, A. Ilgevičius
Publikováno v:
Mathematical Modelling and Analysis, Vol 8, Iss 4 (2003)
The disadvantage of the pure application of numerical approaches, however, is the fact, that the physicals laws behind are not so easy to visualize, the results art not so easy to generalize, and the storage of the information requires mostly an exte
Externí odkaz:
https://doaj.org/article/1718968e7ec14b9e8743ea69407d2969
Autor:
A. Ilgevičius, H. D. Liess
Publikováno v:
Mathematical Modelling and Analysis, Vol 8, Iss 3 (2003)
The usual wire rating problem is to compute the permissible conductor current so, that the maximum conductor temperature does not exceed a specified value. When numerical methods are used to determine wire rating, an iterative approach has to be used
Externí odkaz:
https://doaj.org/article/86a964de00f944acb323c247a2331ce7
Publikováno v:
physica status solidi (b). 253:1046-1053
A study of quaternary alloys of As–S–Ge–Te was performed in order to assess their use in future gas sensors operating at room temperature. To elucidate the effect of tellurium, the quaternary compositions and , with increasing concentration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3473d742724e1f954aad9baa0868b32d
https://doi.org/10.1002/pssb.201552500
https://doi.org/10.1002/pssb.201552500
Publikováno v:
Thin Solid Films. 517:2820-2823
The impedance spectra of tellurium films with interdigital platinum electrodes were investigated in air at temperatures between 10 and 50 °C. Cole–Cole analysis made it possible to assess time constants, resistance, and capacitance of the film at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b80f0760ceaaed8f18cc3355f2c25c37
https://doi.org/10.1016/j.tsf.2008.11.073
https://doi.org/10.1016/j.tsf.2008.11.073
Publikováno v:
Sensors and Actuators B: Chemical. 121:406-413
Effect of O 2 , N 2 and H 2 O to electrical behavior of tellurium-based films as well as cross-sensitivity to NO 2 gas has been studied at temperatures between 20 and 70 °C. The increase of oxygen partial pressure in N 2 + O 2 carrier gas results in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc2b38248b4e6bffccf1944bff2f0bf
https://doi.org/10.1016/j.snb.2006.04.068
https://doi.org/10.1016/j.snb.2006.04.068
Publikováno v:
Thin Solid Films. 485:252-256
Sensing characteristics of tellurium-based thin films for NO 2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical conductivity and sensitivity to NO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea0b83bccd32d1e79f51276e1252a13e
https://doi.org/10.1016/j.tsf.2005.03.045
https://doi.org/10.1016/j.tsf.2005.03.045
Publikováno v:
Sensors and Actuators B: Chemical. 100:380-386
Influences of temperature and annealing on the electrical and sensing properties toward NO2 of tellurium based films were investigated. The annealing at temperatures more than 100 °C causes a sharp decrease both of electrical resistance and sensitiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59319e2a4eb4cb8c11f5458f7e8e6fec
https://doi.org/10.1016/j.snb.2004.02.005
https://doi.org/10.1016/j.snb.2004.02.005
Publikováno v:
Sensors and Actuators B: Chemical. 85:232-238
The effect of propylamine (C3H7NH2) and carbon oxide on electrical conductivity of tellurium based thin films has been investigated. It is shown that the absorption of the propylamine vapor leads to reversible increase of the resistance of the layer,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::395d58ec51368e21054c4769bc74ff37
https://doi.org/10.1016/s0925-4005(02)00113-2
https://doi.org/10.1016/s0925-4005(02)00113-2
Publikováno v:
Sensors and Actuators B: Chemical. 78:191-194
A new kind of gas sensor based on chalcogenide glassy semiconductors for the detection of nitrogen dioxide has been investigated. It contains a sandwich metal–semiconductor (Ge–As–Te ternary alloys)–metal structure which is used as chemical s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f2d3c32e698b4278599e024da8a73b
https://doi.org/10.1016/s0925-4005(01)00811-5
https://doi.org/10.1016/s0925-4005(01)00811-5
Publikováno v:
Sensors and Actuators B: Chemical. 73:35-39
For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO 2 . The sensitivity of this device depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe7bb0ecf72d16d026e8512b19e61d2
https://doi.org/10.1016/s0925-4005(00)00659-6
https://doi.org/10.1016/s0925-4005(00)00659-6