Zobrazeno 1 - 10
of 661
pro vyhledávání: '"H C Scheer"'
Autor:
A. Mayer, T. Haeger, M. Runkel, J. Staabs, J. Rond, F. van gen Hassend, P. Görrn, T. Riedl, H.-C. Scheer
Publikováno v:
Applied Physics A. 128
Promising new materials like solution-processable perovskites may provide devices with superior properties, e.g. for opto-electronics. For some applications patterning is required and nanoimprint as a solvent-free, mechanical shaping process has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::988a6838cb5864111014e588321958fa
https://doi.org/10.1007/s00339-022-05521-0
https://doi.org/10.1007/s00339-022-05521-0
Publikováno v:
Microelectronic Engineering. 53:221-224
The combination of nanoimprint lithography (NIL) and scanning force lithography (SFL) was used for processing features with a defined sidewall angle. We applied a commercial P(MMA/MAA) copolymer, the e-beam resist ARP-610, which was first imprinted b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b480419a520bf7b2348c105524074c70
https://doi.org/10.1016/s0167-9317(00)00301-4
https://doi.org/10.1016/s0167-9317(00)00301-4
Publikováno v:
Modelling and Simulation in Materials Science and Engineering. 6:251-260
Ion beam etching is an important patterning technique for target materials without volatile chemical etch products at moderate temperatures and pressures. Prior to the etching a simulation of the profile evolution is often performed in order to evalu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88eeff84e8f4ecbcd48f2e662cf55d97
https://doi.org/10.1088/0965-0393/6/3/004
https://doi.org/10.1088/0965-0393/6/3/004
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
H. ‐C. Scheer
Publikováno v:
Review of Scientific Instruments. 63:3050-3057
Aspects of ion beam sources are treated which emerge from their use for reactive ion beam etching (RIBE) in silicon VLSI technology. As a basis for this treatment, the requirements for dry etching for VLSI are elaborated, as well as the consequences
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c39b0289e4c46ff85fb9c75f34094eb7
https://doi.org/10.1063/1.1142605
https://doi.org/10.1063/1.1142605
Publikováno v:
Review of Scientific Instruments. 63:3063-3067
Broad ion beams in the energy range of 0.2 to 1.5 keV originating from a filament source with argon as feed gas have been analyzed by high‐resolution emission spectroscopy. The Doppler structure of Ar+ emissions reveals the existence of different v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb8f2728f84d30c8869aaa76b0e4b65
https://doi.org/10.1063/1.1142607
https://doi.org/10.1063/1.1142607
Autor:
U. Köhler, U. Bänziger, P. Hoffmann, H.‐C. Scheer, G. Neumann, B. Schneemann, Ch Huth, J. Janes
Publikováno v:
Review of Scientific Instruments. 63:48-55
An apparatus has been constructed to analyze the particle flux of positive ions on surfaces from dry etching reactors. The particle flux can emerge from a great variety of reactive ion etching systems or from reactive ion beam etching sources. The pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6bd311112ae3458e4b289f6261969db
https://doi.org/10.1063/1.1142741
https://doi.org/10.1063/1.1142741
Publikováno v:
Journal of Applied Physics. 68:5428-5434
Optical emission spectroscopy has been established as a valuable method for the analysis of broad oxygen ion beams. The ion beams used for reactive ion‐beam etching have been investigated in the energy range of 300–1500 eV. From survey spectra O+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa6511246296770c465f6934eb534640
https://doi.org/10.1063/1.346998
https://doi.org/10.1063/1.346998
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:4001-4010
For characterization of the micropatterning qualities of broad ion beam systems we introduce the concept of internal divergence in terms of the ion incidence angle distribution at a point of the processing plane. Methods for determination of this qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79402585c8891c140548adb43bfc92bd
https://doi.org/10.1116/1.576436
https://doi.org/10.1116/1.576436
Publikováno v:
Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dbefe490dabf6a34b4ce9295a539b4d
https://doi.org/10.1109/imnc.2004.245757
https://doi.org/10.1109/imnc.2004.245757