Zobrazeno 1 - 10
of 12
pro vyhledávání: '"H C Jacks"'
Publikováno v:
Materials Research Express, Vol 7, Iss 9, p 095201 (2020)
Specific heat measurements from 2 to 300 K of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large excess specific heat at low temperature, significantly larger than the Debye specific heat calculated from the me
Externí odkaz:
https://doaj.org/article/5825c858284046f5962f7c582a8de2b7
Autor:
H. C. Jacks, M. Molina-Ruiz, M. H. Weber, J. J. Maldonis, P. M. Voyles, M. R. Abernathy, T. H. Metcalf, X. Liu, F. Hellman
Publikováno v:
Physical Review Materials, vol 6, iss 4
Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3827bbee25d6b59ffc3d2fe0a9afcea
http://arxiv.org/abs/2111.10914
http://arxiv.org/abs/2111.10914
Specific heat measurements of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large density of two-level systems at low temperature. Annealing at 200 {\deg}C, well below the growth temperature, does not significan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47c1d47c4d3fb6a8304ff3cea58332e4
Autor:
Frances Hellman, Manel Molina-Ruiz, Jonathan L. DuBois, Xiao Liu, H. C. Jacks, Yaniv Rosen, T. H. Metcalf, M. R. Abernathy
Amorphous silicon contains tunneling two-level systems, which are the dominant energy loss mechanisms for amorphous solids at low temperatures. These two-level systems affect both mechanical and electromagnetic oscillators and are believed to produce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9de98fbe3c5aadca3f9a70fb695919d1
http://arxiv.org/abs/2008.07489
http://arxiv.org/abs/2008.07489
Publikováno v:
Materials Research Express, vol 7, iss 9
Molina-Ruiz, M; Jacks, HC; Queen, DR; Wang, Q; Crandall, RS; & Hellman, F. (2018). Two-level systems and growth-induced metastability in hydrogenated amorphous silicon. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/3t39x2vp
Molina-Ruiz, M; Jacks, HC; Queen, DR; Wang, Q; Crandall, RS; & Hellman, F. (2018). Two-level systems and growth-induced metastability in hydrogenated amorphous silicon. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/3t39x2vp
Specific heat measurements from 2 to 300 K of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large excess specific heat at low temperature, significantly larger than the Debye specific heat calculated from the so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4e00e2657016abbdad6851c98b3c122
http://arxiv.org/abs/1809.07908
http://arxiv.org/abs/1809.07908
Autor:
Olga Korotkova, H. C. Jacks
Publikováno v:
Applied Physics B. 103:413-419
Based on the recently formulated unified theory of coherence and polarization of light, we explore the behavior of the intensity–intensity correlations and the auxiliary quantity called the degree of cross-polarization in stochastic electromagnetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e7aade2adbffc78134aeafac58b7fcf
https://doi.org/10.1007/s00340-010-4240-2
https://doi.org/10.1007/s00340-010-4240-2
Publikováno v:
Queen, DR; Liu, X; Karel, J; Jacks, HC; Metcalf, TH; & Hellman, F. (2015). Two-level systems in evaporated amorphous silicon. Journal of Non-Crystalline Solids, 426, 19-24. doi: 10.1016/j.jnoncrysol.2015.06.020. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/0p80z87j
© 2015 Elsevier B.V. All rights reserved. In e-beam evaporated amorphous silicon (a-Si), the densities of two-level systems (TLS), n0 and P¯, determined from specific heat C and internal friction Q- 1 measurements, respectively, have been shown to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4b721c9b66c07cc1f86c4e170447ce9
https://escholarship.org/uc/item/0p80z87j
https://escholarship.org/uc/item/0p80z87j
Autor:
Johnston-Peck, Aaron C.1 aaron.johnston-peck@nist.gov, Herzing, Andrew A.1
Publikováno v:
Electronic Device Failure Analysis. Feb2024, Vol. 26 Issue 1, p4-13. 10p.
Autor:
Charilaou, M., Hellman, F.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 8, p083907-1-083907-7, 7p, 2 Color Photographs, 3 Graphs
Autor:
Lubchenko, Vassiliy
Publikováno v:
Advances in Physics; May/Jun2015, Vol. 64 Issue 3, p283-443, 161p