Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Hönlein, W."'
Autor:
Seidel, R. V., Graham, A. P., Kretz, J., Rajasekharan, B., Duesberg, G. S., Liebau, M., Unger, E., Kreupl, F., Hoenlein, W.
Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic isla
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411177
Autor:
Kreupl, F., Duesberg, G. S., Graham, A. P., Liebau, M., Unger, E., Seidel, R., Pamler, W., Hoenlein, W.
Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410360
Autor:
Seidel, R. V., Graham, A. P., Rajasekharan, B., Unger, E., Liebau, M., Duesberg, G. S., Kreupl, F., Hoenlein, W.
The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabric
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410336
Publikováno v:
In Diamond & Related Materials 2004 13(4):1296-1300
Publikováno v:
In Diamond & Related Materials 2004 13(2):354-361
Publikováno v:
In Chemical Physics Letters 2004 399(1):280-283
Publikováno v:
In Materials Science & Engineering C 2003 23(6):663-669
Publikováno v:
In Microelectronic Engineering 2002 64(1):399-408
Autor:
Roeder, J.F a, *, Hendrix, B.C a, Hintermaier, F b, Desrochers, D.A a, Baum, T.H a, Bhandari, G a, Chappuis, M a, Van Buskirk, P.C a, Dehm, C b, Fritsch, E b, Nagel, N b, Wendt, H b, Cerva, H b, Hönlein, W b, Mazuré, C b
Publikováno v:
In Journal of the European Ceramic Society 1999 19(6):1463-1466
Autor:
Beitel, G., Wendt, H., Fritsch, E., Weinrich, V., Engelhardt, M., Hasler, B., Röhr, T., Bergmann, R., Scheler, U., Malek, K.-H., Nagel, N., Gschwandtner, A., Pamler, W., Hönlein, W., Dehm, C., Mazuré, C.
Publikováno v:
In Microelectronic Engineering 1999 48(1):299-302