Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Håvard Mølnås"'
Autor:
Atreyo Mukherjee, Haripriya Kannan, Le Thanh Triet Ho, Zhihang Han, Jann Stavro, Adrian Howansky, Neha Nooman, Kim Kisslinger, Sébastien Léveillé, Orhan Kizilkaya, Xiangyu Liu, Håvard Mølnås, Shlok Joseph Paul, Dong Hyun Sung, Elisa Riedo, Abdul Rumaiz, Dragica Vasileska, Wei Zhao, Ayaskanta Sahu, Amir H. Goldan
Publikováno v:
ACS Photonics. 10:134-146
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9d6c537247f5f35d6773a389c5adcb9
https://doi.org/10.1021/acsphotonics.2c01353
https://doi.org/10.1021/acsphotonics.2c01353
Autor:
Håvard Mølnås, Shlok Joseph Paul, Michael R. Scimeca, Navkawal Mattu, Ingrid J. Paredes, Jason A. Rohr, Vikash Kumar Ravi, Letian Li, André D. Taylor, Ayaskanta Sahu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b2379b8be5e05c1c846fedb964820e
https://doi.org/10.2139/ssrn.4452187
https://doi.org/10.2139/ssrn.4452187
Autor:
Håvard Mølnås, Boris Russ, Steven L. Farrell, Madeleine P. Gordon, Jeffrey J. Urban, Ayaskanta Sahu
Publikováno v:
Applied Surface Science. 590:153089
The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6684e0ae53b88c1df486e40977d24581
https://doi.org/10.1016/j.apsusc.2022.153089
https://doi.org/10.1016/j.apsusc.2022.153089
Autor:
Håvard Mølnås
Publikováno v:
Håvard Mølnås
Tap hole refractories constitute critical parts of the refractory lining in submerged arc furnaces. For several hours every day, molten slag and metal flow through the tap hole calling for thorough selection of refractory materials able to withstand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d77ac0dc9ff3e235b6eae7099ed07d4d
http://hdl.handle.net/11250/248999
http://hdl.handle.net/11250/248999