Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Häußermann, Timo"'
Autor:
de Oliveira, Felipe Fávaro, Antonov, Denis, Wang, Ya, Neumann, Philipp, Momenzadeh, S. Ali, Häußermann, Timo, Pasquarelli, Alberto, Denisenko, Andrej, Wrachtrup, Jörg
Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometer positioning accuracy, which is typically achieved by low energy ion implantation. So far, a drawback of this technique is the significant residual impl
Externí odkaz:
http://arxiv.org/abs/1701.07055
Autor:
Antonov, Denis, Häußermann, Timo, Aird, Andrew, Roth, Johannes, Trebin, Hans-Reiner, Müller, Christoph, McGuiness, Liam, Jelezko, Fedor, Yamamoto, Takashi, Isoya, Junichi, Pezzagna, Sébastien, Meijer, Jan, Wrachtrup, Jörg
Experiments show that shallow nitrogen implantations (<10keV) result in a negatively charged nitrogen-vacancy center (NV-) yield of 0.01-0.1%. The most succesful technique for introducing NV- centers in the carbon matrix is ion implantation followed
Externí odkaz:
http://arxiv.org/abs/1303.3730
Autor:
Fávaro de Oliveira, Felipe, Antonov, Denis, Wang, Ya, Neumann, Philipp, Momenzadeh, Seyed Ali, Häußermann, Timo, Pasquarelli, Alberto, Denisenko, Andrej, Wrachtrup, Jörg
Publikováno v:
Nature Communications; May2017, Vol. 8 Issue 5, p15409, 1p
