Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hákon Örn Árnason"'
Autor:
Muhammad Taha Sultan, Hákon Örn Árnason, Movaffaq Kateb, Andrei Manolescu, Halldór Gudfinnur Svavarsson, Ágúst Valfells
Publikováno v:
Nano Select, Vol 2, Iss 12, Pp 2346-2357 (2021)
Abstract The present work reports the evolution and growth of GeGaAs(O) polytype nanoislands over GaAs p‐type substrate with photoemission application in mind. Several morphological transformations from NIs to simultaneously present nanopits/holes
Externí odkaz:
https://doaj.org/article/d4475165209c4f33aca921cc3385f8cd
Autor:
Elham Fakhri, Rodica Plugaru, Muhammad Taha Sultan, Thorsteinn Hanning Kristinsson, Hákon Örn Árnason, Neculai Plugaru, Andrei Manolescu, Snorri Ingvarsson, Halldor Gudfinnur Svavarsson
Publikováno v:
Sensors, Vol 22, Iss 17, p 6340 (2022)
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon
Externí odkaz:
https://doaj.org/article/3cb0735afef64a8ab41d83724bb990b3
Autor:
Agust Valfells, Andrei Manolescu, H. G. Svavarsson, Hákon Örn Árnason, Movaffaq Kateb, M. T. Sultan
Publikováno v:
Nano Select, Vol 2, Iss 12, Pp 2346-2357 (2021)
The present work reports the evolution and growth of GeGaAs(O) polytype nanoislands over GaAs p‐type substrate with photoemission application in mind. Several morphological transformations from NIs to simultaneously present nanopits/holes are obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48adb28b2055e9ed8d461f4bc3fdf2da
https://doaj.org/article/d4475165209c4f33aca921cc3385f8cd
https://doaj.org/article/d4475165209c4f33aca921cc3385f8cd