Zobrazeno 1 - 10
of 210
pro vyhledávání: '"H, Zisser"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:514-519
The thermo-mechanical robustness of the bottom edge of an open through silicon via (TSV) is investigated by simulating the most critical step during the TSV process flow. In this step, stress arises due to the different thermal expansion coefficients
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::535463d9b39e1c98724f7f9777410644
https://doi.org/10.1109/tdmr.2019.2923669
https://doi.org/10.1109/tdmr.2019.2923669
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:470-474
We applied a nanoindentation technique in an open through silicon via structure by means of simulations. During nanoindentation, a spherical diamond indenter penetrates into the device by applying a force. This penetration causes displacement and def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d83bb9d76a241109d8379a6a460110
https://doi.org/10.1109/tdmr.2016.2622727
https://doi.org/10.1109/tdmr.2016.2622727
Akademický článek
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Publikováno v:
Facta universitatis - series: Electronics and Energetics. 27:1-11
Current electromigration models used for simulation and analysis of interconnect reliability lack the appropriate description of metal microstructure and consequently have a very limited predictive capability. Therefore, the main objective of our wor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c26e9a51e9252d3f867a74d4eff61227
https://doi.org/10.2298/fuee1401001c
https://doi.org/10.2298/fuee1401001c
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Electromigration is one of the main reliability failure mechanisms of interconnects in integrated circuits. Thereby, electromigration in copper interconnects can cause void nucleation and growth close to the cathode. The analysis of the resistance de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018ab8c074477fc97bfa868468bb125c
https://doi.org/10.1109/irps.2016.7574616
https://doi.org/10.1109/irps.2016.7574616
Publikováno v:
Diabetic Medicine
Aim The efficacy and safety of insulin aspart (IAsp), a rapid-acting human insulin analogue, were compared with regular human insulin (HI) as the bolus component of basal-bolus therapy for subjects with gestational diabetes mellitus (GDM). Methods In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d500b5c45df8a9185151b90b961eed0d
https://doi.org/10.1111/j.1464-5491.2007.02247.x
https://doi.org/10.1111/j.1464-5491.2007.02247.x
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We have analyzed how the mechanical and geometrical parameters of the Open Through Silicon Vias influence failures induced by delamination of the interfaces. Through Silicon Vias are the units of the interconnection structure that establish the conne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65a958bf8aa51627ea6311b7736f6fae
https://doi.org/10.1109/sispad.2015.7292350
https://doi.org/10.1109/sispad.2015.7292350
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Through silicon vias (TSVs) are innovative interconnects which provide wider functionality and higher performance per unit area in three-dimensional (3D) integrated circuits. The reliability of TSVs in integrated circuits constitutes an important iss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a5e05ad8f04f2b356b272883c28ffa
https://doi.org/10.1109/ipfa.2015.7224426
https://doi.org/10.1109/ipfa.2015.7224426
Publikováno v:
2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
Recently, Through Silicon Vias (TSVs) have attracted much attention in three-dimensional (3D) integration technology due to their function as vertical connections of the different stacked semiconductor dies. Since electromigration (EM) will continue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8517061545b6eee841bc06f9185368a
https://doi.org/10.1109/eurosime.2015.7103100
https://doi.org/10.1109/eurosime.2015.7103100
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12996f4e89f3e323f122a769e66c30dd
https://doi.org/10.1109/sispad.2014.6931603
https://doi.org/10.1109/sispad.2014.6931603