Zobrazeno 1 - 10
of 182
pro vyhledávání: '"H, Raidt"'
Publikováno v:
Journal of Physics D: Applied Physics. 38:319-327
The plastic relaxation of SiGe/Si is closely related to the nucleation of misfit dislocations at early stages. We have investigated the very early stages at annealing temperatures ranging from 520°C to 670°C by means of x-ray topography (XRT), atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5abeacbe5ecd333b78d23923fb1e6b0f
https://doi.org/10.1088/0022-3727/38/2/017
https://doi.org/10.1088/0022-3727/38/2/017
Autor:
D. Grigoriev, William Ted Masselink, T. Panzner, Martin Schmidbauer, Peter Schäfer, Fariba Hatami, Rolf Köhler, Michael Hanke, H. Raidt
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:1139-1142
We report on free-standing InP quantum dots grown on (0 0 1) InGaP/GaAs which exhibit a pronounced size anisotropy with respect to the [ 1 1 0 ] and [ 1 1 0 ] directions. X-ray diffuse scattering together with respective kinematical simulations using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6b857e014c77f2a26eeace3cb2a7227
https://doi.org/10.1016/s1386-9477(02)00321-1
https://doi.org/10.1016/s1386-9477(02)00321-1
Publikováno v:
Journal of Physics D: Applied Physics. 32:A230-A233
Highly regular islands of strained Si1-xGex have been grown on Si (001) by liquid phase epitaxy (LPE). The islands themselves are {111}-faceted truncated pyramids with a narrow base-width size distribution and coherent behaviour. In this study we rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9bdd029a40c9aab74ff0bd2c3bb93ba
https://doi.org/10.1088/0022-3727/32/10a/345
https://doi.org/10.1088/0022-3727/32/10a/345
Publikováno v:
Physical Review B. 58:10523-10531
We have investigated pseudomorphic ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ layers grown on Si (001) by means of liquid-phase epitaxy. The layers have been grown in Stranski-Krastanov growth mode and consist of coherent {111}-faceted trunc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f514c713a7613cb7ad28db0e69a28939
https://doi.org/10.1103/physrevb.58.10523
https://doi.org/10.1103/physrevb.58.10523
Publikováno v:
Crystal Research and Technology. 33:593-604
Relaxation of strained layer systems is still not well understood. It is time dependent and changes considerably for samples with different growth history. This has to be discussed in terms of nucleation, glide velocity and blocking of misfit disloca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbbbd91ef27fc23c34e2a06368b7e711
https://doi.org/10.1002/(sici)1521-4079(1998)33:4<593::aid-crat593>3.0.co
https://doi.org/10.1002/(sici)1521-4079(1998)33:4<593::aid-crat593>3.0.co
Autor:
Edith H. Raidt
Publikováno v:
Lexikos. 3
Vanaf sy begin in 1926 het die Woordeboek van die Afrikaanse Taal baie ingrypende redaksionele wysigings ondergaan. Dit het veroorsaak dat die publikasie van dele I tot VIII (1951-1991) met onaanvaarbaar lang vertragings gepaard gegaan het. Met WAT V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96560bbb62ece8000b42861c0bd56ed2
https://doi.org/10.5788/3-1-1108
https://doi.org/10.5788/3-1-1108
Autor:
M. Konuma, Florian Banhart, E. Bauser, R. Köhler, A. Gutjahr, H. Raidt, I. Silier, B. Jenichen
Publikováno v:
Journal of Applied Physics. 80:4101-4107
By applying liquid phase epitaxy, we have grown defect‐free silicon and silicon–germanium layers on partially oxide‐masked Si wafers. The growth of the layers started epitaxially in oxide‐free seeding areas and proceeded laterally over the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c1f332904ee9463261581c18c7c9e8
https://doi.org/10.1063/1.363371
https://doi.org/10.1063/1.363371
Autor:
A. Gutjahr, I. Silier, N. Nagel, E. Czech, H. Raidt, E. Bauser, R. Köhler, B. Jenichen, M. Konuma, P.O. Hansson, Florian Banhart
Publikováno v:
Journal of Crystal Growth. 166:727-730
We have grown defect-free semiconductor-on-insulator (SOI) layers by liquid phase epitaxy. Defect-free Si layers grow laterally over SiO 2 by starting from seeding windows or ridge seeds on selectively oxide-masked (111) Si substrates. Growth is term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8df2be0be8b8b3cb3eef29280daf76d3
https://doi.org/10.1016/0022-0248(96)00124-8
https://doi.org/10.1016/0022-0248(96)00124-8
Publikováno v:
Journal of Crystal Growth. 154:1-9
A continuous spectrum of misorientations of all azimuthal angles and inclinations varying from 0° to 8° occurring on spherically shaped substrates was used to study the development of terrace-step structures of homoepitaxially grown GaAs (001) by r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8fb5f1a6cdb21d74ddc1fad98d8d74c
https://doi.org/10.1016/0022-0248(95)00162-x
https://doi.org/10.1016/0022-0248(95)00162-x
Publikováno v:
Journal of Physics D: Applied Physics. 28:A50-A55
By means of X-ray double-crystal topography we have investigated silicon-on-insulator lamellae grown by liquid-phase epitaxy upon thermally oxidized silicon. The majority of the lamellae were free of extended defects. It is shown that the topographic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7716d3039e99870b21908c73201d323
https://doi.org/10.1088/0022-3727/28/4a/010
https://doi.org/10.1088/0022-3727/28/4a/010