Zobrazeno 1 - 10
of 69
pro vyhledávání: '"H, Lahreche"'
Autor:
A. Minko, V. Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, C. Gaquiere, D. Theron, J.C. De Jaeger, H. Lahreche, L. Wedzikowski, R. Langer, P. Bove
Publikováno v:
IEEE Electron Device Letters. 25:453-455
AlGaN-GaN high electron mobility transistors (HEMTs) on silicon substrate are fabricated. The device with a gate length of 0.3-/spl mu/m and a total gate periphery of 300 /spl mu/m, exhibits a maximum drain current density of 925 mA/mm at V/sub GS/=0
Publikováno v:
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
The InP-based materials system with InGaAs is recognized as having one of the best potential for high speed HBTs. InP/InGaAs SHBTs have demonstrated good cut-off frequencies but suffer from low breakdown voltage because of the narrow InGaAs collector
Autor:
K. Gołaszewska, M. Guziewicz, H. Lahreche, P. Bove, R. Langer, E. Kamińska, A. Piotrowska, M. A. Poisson, J. Z. Domagala
Publikováno v:
Journal of Physics: Conference Series. 100:042035
The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline
Autor:
Brent P. Gila, M. Hlad, Fan Ren, Lance Covert, Timothy J. Anderson, Jenshan Lin, J. Thuret, Lars F. Voss, Philippe Bove, Stephen J. Pearton, H. Lahreche
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:2302
AlGaN∕GaN high electron mobility transistors were grown by molecular beam epitaxy on Si on poly-SiC substrates formed by the Smart Cut™ process. The Smart Cut™ approach is an alternative solution to provide both a high resistivity and an excell
Publikováno v:
Journal of The Electrochemical Society. 153:G681
Schottky rectifiers fabricated on GaN layers grown on 4 in. diam Si substrates show breakdown voltages (V R ) of ∼ 300 V at room temperature, on-state resistances (R ON ) of 40 mΩ cm 2 , and figure-of-merit (V B ) 2 /R ON of 2.25 MW/cm 2 . The rev
Publikováno v:
Electronics Letters. 33:1907
Discrete time switching events are observed when measuring the current of silicon carbide Schottky diodes. RTS noise occurs whenever an excess current is measured. The random telegraph signal (RTS) is shown to originate from localised defective areas
Autor:
H. Lahreche
Publikováno v:
Tuberculosis of the Bones and Joints ISBN: 9783642648083
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::624fd7533cef0da2f6cd776893b82d45
https://doi.org/10.1007/978-3-642-61358-6_6
https://doi.org/10.1007/978-3-642-61358-6_6
Publikováno v:
Broncho-pneumologie. 30(3)
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.