Zobrazeno 1 - 10
of 60
pro vyhledávání: '"H, Giesler"'
Autor:
Ralf Richter, Thomas Melde, Stefan Duenkel, H. Giesler, N. Weddeler, Sven Beyer, M. Trentzsch, M. Otto, F. Weisbuch
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Besides the high interest and effort spend for emerging memories, the market is still demanding embedded floating gate flash as non-volatile memory solution. Single Poly floating gate fabrication in SOI technology offers new scaling opportunities by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ae2514b5570f787d3591913558983f
https://doi.org/10.1109/imw51353.2021.9439612
https://doi.org/10.1109/imw51353.2021.9439612
Akademický článek
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Autor:
Frank Padberg, H. Giesler, Harald Scherk, D. Geissler, Daniel Strech, Oliver Gruber, Peter Brieger, Tom Bschor, Peter Bräunig, R. Gielen, Peter Falkai, C. Muche-Borowski, Thomas C. Baghai, Michael Bauer, Thomas D. Meyer, Andrea Pfennig, K. H. Möhrmann, Ina Kopp
Publikováno v:
Der Nervenarzt. 83:568-586
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03909165a497ef314d80fdde93f6d2a5
https://doi.org/10.1007/s00115-011-3415-3
https://doi.org/10.1007/s00115-011-3415-3
Publikováno v:
Der Nervenarzt. 83:587-594
„Trialog“ meint die moglichst gleichberechtigte Zusammenarbeit von Betroffenen/Patienten und Behandlern sowie das selbstverstandliche Einbeziehen der Angehorigen. Das gilt fur die Therapie, die Antistigmaarbeit, bei der Planung der Versorgung, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16400fe38410f6b39c6c970361c5b9c2
https://doi.org/10.1007/s00115-011-3416-2
https://doi.org/10.1007/s00115-011-3416-2
Akademický článek
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Publikováno v:
Journal of Applied Physics. 89:6506-6513
Thin films of different metals M (M=Ti, Zr, Hf, Nb, Fe, and Ni) of thickness around 10 nm are deposited on Si(100) substrates and a ∼30 nm Co film is deposited on these metal films using the magnetron sputtering method. Cross-sectional transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1963696caa2bf9ee53296f2449f86d5
https://doi.org/10.1063/1.1369403
https://doi.org/10.1063/1.1369403
Autor:
S. Schwendler, Meiken Falke, H. Giesler, D. K. Sarkar, Anna Mogilatenko, S. Teichert, H.-J. Hinneberg, G. Beddies
Publikováno v:
Microelectronic Engineering. 55:227-232
The most rich silicon silicides of manganese, the group of higher manganese silicides (HMS), have the composition MnSix with x in the range from 1.67 to 1.75. This material group with a tetragonal crystal structure shows semiconducting electronic pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d871efa50c1fa357b3816e1eb66694f0
https://doi.org/10.1016/s0167-9317(00)00452-4
https://doi.org/10.1016/s0167-9317(00)00452-4
Publikováno v:
Applied Physics A: Materials Science & Processing. 70:681-684
The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::643564245dd14ffa54916db268502193
https://doi.org/10.1007/s003390050015
https://doi.org/10.1007/s003390050015
Autor:
H. J. Osten, H.-J. Hinneberg, G. Beddies, D. K. Sarkar, J. Griesche, Meiken Falke, G. Lippert, H. Giesler, S. Teichert
Publikováno v:
Microelectronic Engineering. 50:193-197
The reaction of Co with epitaxial Si 1− y C y (001) films is investigated with regard to dependence on annealing temperature and C concentration y . Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a71a79c5f2864c745e098314e9f79f
https://doi.org/10.1016/s0167-9317(99)00282-8
https://doi.org/10.1016/s0167-9317(99)00282-8
Autor:
G. Lippert, Meiken Falke, S. Teichert, H. J. Osten, H.-J. Hinneberg, G. Beddies, J. Griesche, H. Giesler
Publikováno v:
Solid-State Electronics. 43:1051-1054
The disilicide of Co is a promising metallic material for the submicron technology with the advantage of a low specific resistivity as well as of a low preparation temperature. A further downscaling in the Si technology requires in addition to lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e1ed5166334a32f0ab4d7e0d6d9ed3e
https://doi.org/10.1016/s0038-1101(99)00023-4
https://doi.org/10.1016/s0038-1101(99)00023-4