Výsledky vyhledávání

SuperCam Calibration Targets: Design and Development

Autor: Ann Ollila, V. Sautter, Juan Manuel Madariaga, Gilles Dromart, J. Javier Laserna, P.-Y. Meslin, P. Bernardi, G. Montagnac, V. Garcia-Baonza, Morten Madsen, Agnes Cousin, C. Castro, J. Aramendia, Andoni Moral, Edward A. Cloutis, I. Sard, M. Toplis, Sylvestre Maurice, C. Drouet, Eva Mateo-Martí, Bruno Dubois, David Escribano, J. A. Sanz-Arranz, Jesús Medina, Soren N. Madsen, C. Ortega, Jeffrey R. Johnson, Olivier Gasnault, Kepa Castro, Jose A. Rodriguez, Fernando Rull, Olivier Forni, Ph. Cais, Olga Prieto-Ballesteros, Guillermo Lopez-Reyes, Pablo Sobron, Cécile Fabre, Marco Veneranda, Jesus Saiz, A. Fernandez, Alicia Berrocal, J. M. Reess, Jérémie Lasue, Sylvain Bernard, Pierre Beck, S. Robinson, J. Moros, Gorka Arana, Roger C. Wiens, Samuel M. Clegg, M. H. Bernt, I. Gontijo, Olivier Beyssac, Jose Antonio Manrique

Publikováno v: Manrique, J A, Lopez-Reyes, G, Cousin, A, Rull, F, Maurice, S, Wiens, R C, Madsen, M B, Madariaga, J M, Gasnault, O, Aramendia, J, Arana, G, Beck, P, Bernard, S, Bernardi, P, Bernt, M H, Berrocal, A, Beyssac, O, Cais, P, Castro, C, Castro, K, Clegg, S M, Cloutis, E, Dromart, G, Drouet, C, Dubois, B, Escribano, D, Fabre, C, Fernandez, A, Forni, O, Garcia-Baonza, V, Gontijo, I, Johnson, J, Laserna, J, Lasue, J, Madsen, S, Mateo-Marti, E, Medina, J, Meslin, P-Y, Montagnac, G, Moral, A, Moros, J, Ollila, A M, Ortega, C, Prieto-Ballesteros, O, Reess, J M, Robinson, S, Rodriguez, J, Saiz, J, Sanz-Arranz, J A, Sard, I, Sautter, V, Sobron, P, Toplis, M & Veneranda, M 2020, ' SuperCam Calibration Targets : Design and Development ', Space Science Reviews, vol. 216, no. 8, 138 . https://doi.org/10.1007/s11214-020-00764-w
Space Science Reviews
Space Science Reviews, 2020, 216 (8), pp.138. ⟨10.1007/s11214-020-00764-w⟩
Space Science Reviews, Springer Verlag, 2020, 216 (8), pp.138. ⟨10.1007/s11214-020-00764-w⟩
DIGITAL.INTA Repositorio Digital del Instituto Nacional de Técnica Aeroespacial
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
Digital.CSIC. Repositorio Institucional del CSIC
Instituto Nacional de Técnica Aeroespacial (INTA)
UVaDOC. Repositorio Documental de la Universidad de Valladolid

SuperCam is a highly integrated remote-sensing instrumental suite for NASA’s Mars 2020 mission. It consists of a co-aligned combination of Laser-Induced Breakdown Spectroscopy (LIBS), Time-Resolved Raman and Luminescence (TRR/L), Visible and In fra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d51b9e6e80885547a0fd167cdf2655b
https://pubmed.ncbi.nlm.nih.gov/33281235

Zobrazit plný text záznamu

Plný text ve formátu HTML

Radiometric Calibration Targets for the Mastcam-Z Camera on the Mars 2020 Rover Mission

Publikováno v: DIGITAL.INTA Repositorio Digital del Instituto Nacional de Técnica Aeroespacial
Instituto Nacional de Técnica Aeroespacial (INTA)
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Kinch, K. M.; Madsen, M. B.; Bell, J. F.; Maki, J. N.; Bailey, Z. J.; Hayes, A. G.; Jensen, O. B.; Merusi, M.; Bernt, M. H.; Sørensen, A. N.; Hilverda, M.; Cloutis, E.; Applin, D.; Mateo-Marti, E.; Manrique, J. A.; Lopez-Reyes, G.; Bello-Arufe, A.; Ehlmann, B. L.; Buz, J.; Pommerol, A.; ... (2020). Radiometric Calibration Targets for the Mastcam-Z Camera on the Mars 2020 Rover Mission. Space science reviews, 216(8) Springer 10.1007/s11214-020-00774-8
Digital.CSIC. Repositorio Institucional del CSIC
Space Science Reviews
Kinch, K M, Madsen, M B, Bell, J F, Maki, J N, Bailey, Z J, Hayes, A G, Jensen, O B, Merusi, M, Bernt, M H, Sørensen, A N, Hilverda, M, Cloutis, E, Applin, D, Mateo-Marti, E, Manrique, J A, Lopez-Reyes, G, Bello-Arufe, A, Ehlmann, B L, Buz, J, Pommerol, A, Thomas, N, Affolter, L, Herkenhoff, K E, Johnson, J R, Rice, M, Corlies, P, Tate, C, Caplinger, M A, Jensen, E, Kubacki, T, Cisneros, E, Paris, K & Winhold, A 2020, ' Radiometric Calibration Targets for the Mastcam-Z Camera on the Mars 2020 Rover Mission ', Space Science Reviews, vol. 216, no. 8, 141 . https://doi.org/10.1007/s11214-020-00774-8
Kinch, K M, Madsen, M B, Bell, J F, Maki, J N, Bailey, Z J, Hayes, A G, Jensen, O B, Merusi, M, Bernt, M H, Sorensen, A N, Hilverda, M, Cloutis, E, Applin, D, Mateo-Marti, E, Manrique, J A, Lopez-Reyes, G, Bello-Arufe, A, Ehlmann, B L, Buz, J, Pommerol, A, Thomas, N, Affolter, L, Herkenhoff, K E, Johnson, J R, Rice, M, Corlies, P, Tate, C, Caplinger, M A, Jensen, E, Kubacki, T, Cisneros, E, Paris, K & Winhold, A 2020, ' Radiometric Calibration Targets for the Mastcam-Z Camera on the Mars 2020 Rover Mission ', Space Science Reviews, vol. 216, no. 8, 141 . https://doi.org/10.1007/s11214-020-00774-8

The Mastcam-Z Camera is a stereoscopic, multispectral camera with zoom ca pability on NASA’s Mars-2020 Perseverance rover. The Mastcam-Z relies on a set of two deck-mounted radiometric calibration targets to validate camera performance and to provi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6064615119a8d36c40c48f2f3cc828b0
https://doi.org/10.1007/s11214-020-00774-8

Zobrazit plný text záznamu

The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

Autor: W. Seifert, P. Staudt-Fischbach, D. Friedrich, H.-J. Wildau, W. Windbracke, H.G. Wagemann, H. Bernt

Publikováno v: IEEE Transactions on Electron Devices. 40:2318-2325

Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithography with effective channel lengths down to 0.35 mu m. The measurements have been performed within the temperatu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a73a665d81fb86c373d119fae11668f5
https://doi.org/10.1109/16.249481

Zobrazit plný text záznamu

Correlation between mobility degradation and threshold-voltage behavior of subhalf-micron MOSFETs

Autor: H. Bernt, D. Friedrich, H.G. Wagemann, H.-J. Wildau, P. Staudt-Fischbach, W. Seifert, W. Windbracke

Publikováno v: Microelectronic Engineering. 19:785-788

Minority carrier mobility has been extracted from measurements on NMOS transistors with effective channel lengths down to 0.35 ?m within the temperature range 208-403 K. The results indicate a significant mobility reduction for short channel devices

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::691c001b5aa1a53d82a0bfb68554f357
https://doi.org/10.1016/0167-9317(92)90545-3

Zobrazit plný text záznamu

Complete x-ray lithography processing of an 8-level 0.4 micron CMOS test device

Autor: H.-L. Huber, P. Lange, K. Simon, D. Friedrich, H.-J. Schliwinski, P. Hemicker, H. Bernt, U. Scheunemann, P. Staudt-Fischbach, G. Zwicker, W. Windbracke

Publikováno v: Microelectronic Engineering. 17:153-156

Sub-0.5 mu m CMOS devices have been successfully fabricated by means of X-ray lithography at all levels. The overlay of subsequent lithography levels was determined to be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::737edae66af172926fad8efd93c20ba1
https://doi.org/10.1016/0167-9317(92)90031-l

Zobrazit plný text záznamu

In situ temperature and distribution measurements of x-ray

Autor: K. Engler, J. Trube, H.L. Huber, H. Bernt

Publikováno v: Microelectronic Engineering. 17:193-197

For high throughput with X-ray lithography, a very sensitive X-ray resist, good X-ray transparency of the mask and high exposure power are required. This leads to a local temperature rise of the X-ray masks due to the absorbed power and, therefore, t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5754f5173069c77ef6a7d29bee7cc2a4
https://doi.org/10.1016/0167-9317(92)90040-x

Zobrazit plný text záznamu

Comparison between surface channel PMOS transistors processed with optical and X-ray lithography with regard to X-ray damage

Autor: D. Friedrich, A. Kaatz, W. Windbracke, L. Schmidt, H. Bernt, F. Naumann

Publikováno v: Microelectronic Engineering. 11:259-262

In order to determine the influence of X-ray induced radiation damages, surface channel PMOS devices with partially scaled 0.5 μ m design rules were fabricated using optical and X-ray lithography. With a gate oxide thickness d ox = 10 nm the X-ray p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7165e51b2b55304908b0195e73a86e7f
https://doi.org/10.1016/0167-9317(90)90110-f

Zobrazit plný text záznamu

Laser Annealing of Power Devices

Autor: D. Friedrich, H. Hanssen, P. Oesterlin, H. Schmidt, H. Bernt

Publikováno v: 2007 15th International Conference on Advanced Thermal Processing of Semiconductors.

The discrete IGBT (Insulated Gate Bipolar Transistor) is the most important power semiconductor device for power conversion and control in the medium power range with voltages >400 V. Next generation IGBTs require low thermal budget p-n junction form

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7657a34524412e3892e41437952c7fe9
https://doi.org/10.1109/rtp.2007.4383852

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání