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pro vyhledávání: '"Gyuwon Yang"'
Publikováno v:
npj Flexible Electronics, Vol 8, Iss 1, Pp 1-11 (2024)
Abstract We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels a
Externí odkaz:
https://doaj.org/article/3802c26cd86e42ffa7dfd7aeff7678db