Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Gyuseung Han"'
Autor:
Chanyoung, Yoo, Jeong Woo, Jeon, Seungjae, Yoon, Yan, Cheng, Gyuseung, Han, Wonho, Choi, Byongwoo, Park, Gwangsik, Jeon, Sangmin, Jeon, Woohyun, Kim, Yonghui, Zheng, Jongho, Lee, Junku, Ahn, Sunglae, Cho, Scott B, Clendenning, Ilya V, Karpov, Yoon Kyung, Lee, Jung-Hae, Choi, Cheol Seong, Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Atomic layer deposition (ALD) of Sb
Publikováno v:
Journal of Materials Chemistry C. 9:851-859
The solid solution of BexMg1−xO is examined as a candidate for high-κ dielectric materials by considering the dielectric constant, bandgap, and phase stability at the same time. Using ab initio calculations including phonon calculations, the subtl
Publikováno v:
Nanoscale. 12:17703-17714
This study provides an ab initio thermodynamics approach to take a step forward in the theoretical modeling on the growth of GaAs nanowires. In order to understand the effects of growth conditions on the involvement of stacking faults and polytypism,
Autor:
Gyuseung Han, In Won Yeu, Kun Hee Ye, Seungjae Yoon, Taeyoung Jeong, Seung-Cheol Lee, Cheol Seong Hwang, Jung-Hae Choi
Publikováno v:
Chemical Physics Letters. 804:139887
Publikováno v:
Materials Science and Engineering: B. 280:115713
Publikováno v:
Computer Physics Communications. 268:108089
This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the e
Autor:
In Won Yeu, Hyun Cheol Koo, Gun Wu Ju, Young-hun Shin, Jung-Hae Choi, Yun Joong Lee, Hansung Kim, Hyung-jun Kim, Gyuseung Han
Publikováno v:
Journal of Alloys and Compounds. 874:159848
The evolution of the surface morphology and underlying pyramidal defects in homoepitaxial GaAs (110) layers was investigated with respect to the layer thickness up to 1 µm. Ga and As atoms coexisting in a one-to-one atomic ratio on the (110)-oriente
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS2 using first principles and lattice dynamics calculations. First principle calculations show the prominent anharmonic coupling of the infrared inacti
Autor:
Jaehong, Park, In Won, Yeu, Gyuseung, Han, Chaun, Jang, Joon Young, Kwak, Cheol Seong, Hwang, Jung-Hae, Choi
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 31(31)
Electrons in two-dimensional layered crystals gain a discrete positional degree of freedom over layers. We propose the two-dimensional transition metal dichalcogenide homostructure with polar symmetry as a prototypical platform where the degrees of f
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports
Scientific Reports
This work reports on the theoretical equilibrium crystal shapes of GaAs and InAs as a function of temperature and pressure, taking into account the contribution of the surface vibration, using ab-initio thermodynamic calculations. For this purpose, n