Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Gyungseon Seol"'
Autor:
Ashutosh Verma, Chul-Ho Kim, Jaeyeol Han, Lo Chilun, Nam-Seog Kim, Jongwoo Lee, Ikkyun Jo, Seok-Won Lee, Myoung-Gyun Kim, Chih-Wei Yao, Gyungseon Seol, Shinwoong Kim
Publikováno v:
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
The proposed fully-integrated digital-intensive TRX SoC allows dual-mode protocols of BLE 5.0 and IEEE 802.14.5 with extended-range wireless connectivity and simple ad-hoc mesh networks for the IoTs in smart homes. A 1.04 - 4V with dual-mode supply s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6157be9a2a133bae67228cb59789086d
https://doi.org/10.1109/rfic.2019.8701802
https://doi.org/10.1109/rfic.2019.8701802
Publikováno v:
Nano Research. 5:164-171
We examine the performance limits of field-effect transistors (FETs) with chemically modified graphene as the channel materials. Graphene nanoroad (XNR) and graphene nanomesh (XNM) can be created through selective chemical modification by an X adsorb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01930699630adebe753ee9b05c9a6eff
https://doi.org/10.1007/s12274-012-0196-3
https://doi.org/10.1007/s12274-012-0196-3
Publikováno v:
Nano Letters. 11:2419-2423
A new type of crystalline silicon solar cell is described. Superficially similar to a photoelectrochemical cell a liquid electrolyte creates a depletion (inversion) layer in an n-type silicon wafer, however no regenerative redox couple is present to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9443479d9eba0420ea7b54a565f26349
https://doi.org/10.1021/nl200811z
https://doi.org/10.1021/nl200811z
Publikováno v:
Japanese Journal of Applied Physics. 46:2296-2299
Gate length reduction technology was developed for pseudomorphic high-electron-mobility transistors (P-HEMTs) applicable to nano-HEMTs. This technology utilizes various reactions between plasmas and dielectrics. Using optimum conditions for reducing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda25fce1bbae8f7a71a74c6b94ba609
https://doi.org/10.1143/jjap.46.2296
https://doi.org/10.1143/jjap.46.2296
Publikováno v:
Japanese Journal of Applied Physics. 45:3376-3379
InAlAs/InGaAs high electron mobility transistors (HEMTs) have been a great contribution to the research and development of high-speed integrated circuits, owing to their high electron mobilities, high saturation velocities, and high sheet electron de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c990ca13931fa0e1cbbfaa9d6f9eb04d
https://doi.org/10.1143/jjap.45.3376
https://doi.org/10.1143/jjap.45.3376
Performance evaluation of MoS2-WTe2 vertical tunneling transistor using real-space quantum simulator
Publikováno v:
2014 IEEE International Electron Devices Meeting.
Layered two dimensional (2D) semiconductor materials enable vertical interlayer heterojunctions (HJ) without the requirement of lattice matching. Interlayer transport through a MoS 2 -WTe 2 vertical HJ transistor is studied by atomistic quantum devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e6c21f9cf7506dea8499919478b7e75
https://doi.org/10.1109/iedm.2014.7047141
https://doi.org/10.1109/iedm.2014.7047141
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ca69ffc62223a1d68e0daaa82f9673b
http://arxiv.org/abs/1408.3026
http://arxiv.org/abs/1408.3026
Autor:
Ali Javey, Joel W. Ager, Jeong Seuk Kang, Rehan Kapadia, Hui Fang, Gyungseon Seol, Jing Guo, Sujay B. Desai, Corsin Battaglia
Publikováno v:
Nano letters. 14(8)
Transition metal dichalcogenides, such as MoS2 and WSe2, have recently gained tremendous interest for electronic and optoelectronic applications. MoS2 and WSe2 monolayers are direct bandgap and show bright photoluminescence (PL), whereas multilayers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65bde3206f38e26b456a85f09953d04f
https://pubmed.ncbi.nlm.nih.gov/24988370
https://pubmed.ncbi.nlm.nih.gov/24988370
Publikováno v:
Nano letters. 13(5)
We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13) cm(-2) and 2.5 × 10(12) cm(-2) for MoS2 and WSe2 are obtained, respect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfe778ec55c09e7bb93c402b93fcc4af
https://pubmed.ncbi.nlm.nih.gov/23570647
https://pubmed.ncbi.nlm.nih.gov/23570647
Autor:
Gyungseon Seol, Jing Guo
Publikováno v:
2011 International Electron Devices Meeting.
Chemical modification of graphene plays an important role on opening a bandgap for potential digital electronic device applications. We propose and examine the performance limits of graphene nanoroad and graphene nanomesh transistors created by selec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0701282d67336f4683f84d45f99a47
https://doi.org/10.1109/iedm.2011.6131474
https://doi.org/10.1109/iedm.2011.6131474