Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Gyuho Myeong"'
Autor:
Gyuho Myeong, Wongil Shin, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Taehun Lee, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu, Sungjae Cho
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-6 (2022)
While different types of low-power transistors have been investigated, low voltage rectifiers able to overcome the thermionic limit have not been proposed yet. Here, the authors report the realization of Dirac-source diodes based on graphene/MoS2/gra
Externí odkaz:
https://doaj.org/article/5a44d8d2bb864a39a6d4ca972a8b9c8b
Autor:
Kenji Watanabe, Takashi Taniguchi, Seung-Ho Kim, Sungjae Cho, Chul Ho Lee, Jeehoon Park, Gyuho Myeong, Taehyuk Jin
Publikováno v:
ACS Applied Electronic Materials. 2:3491-3496
Reductions in transistor size have improved functionality of transistors and lowered costs of electronic processors. However, as transistors decrease in size, quantum tunneling causes increased lea...
Publikováno v:
Nano Letters. 20:3963-3969
Transistor downscaling by Moore's law has facilitated drastic improvements in information technology, but this trend cannot continue because power consumption issues have pushed Moore's law to its limit. Tunnel field-effect transistors (TFETs) have b
Autor:
Wongil Shin, Seung-Ho Kim, Sungjae Cho, Taehyeok Jin, Gyuho Myeong, Sung-Jin Chang, Kenji Watanabe, Boram Kim, Takashi Taniguchi, Hongsik Lim
Publikováno v:
Nature Nanotechnology. 15:203-206
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently needed. Tr
Autor:
Wongil Shin, Gyuho Myeong, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Kenji Watanabe, Takashi Taniguchi, Fei Liu, Sungjae Cho
Publikováno v:
Applied Physics Letters. 120:243506
Today's circuit technology requires low-power transistors and diodes to extend Moore's law. While research has been focused on reducing power consumption of transistors, low-power diodes have not been widely studied. Here, we report a low-power, thus
Autor:
Gyuho Myeong, Wongil Shin, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Taehun Lee, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu, Sungjae Cho
An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7006bbd01c48993685301d6f523e755
Autor:
Lijun, Li, Jin, Zhang, Gyuho, Myeong, Wongil, Shin, Hongsik, Lim, Boram, Kim, Seungho, Kim, Taehyeok, Jin, Stuart, Cavill, Beom Seo, Kim, Changyoung, Kim, Johannes, Lischner, Aires, Ferreira, Sungjae, Cho
Publikováno v:
ACS nano. 14(5)
We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS