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pro vyhledávání: '"Gyeongseob Seo"'
Publikováno v:
Eng, Vol 5, Iss 1, Pp 495-512 (2024)
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAN
Externí odkaz:
https://doaj.org/article/03b5ce7c58ee45af97067eb8d485860d