Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gyeongpyo Kim"'
Publikováno v:
Nanomaterials, Vol 14, Iss 19, p 1575 (2024)
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck. Recently, due to their unique optoelectronic properti
Externí odkaz:
https://doaj.org/article/1f8c84e3e6854217bba3cfb168c3220f
Publikováno v:
Biomimetics, Vol 9, Iss 9, p 578 (2024)
In this study, we investigate the impact of O2 plasma treatment on the performance of Al/TaOX/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron micro
Externí odkaz:
https://doaj.org/article/f404c202233947559841a8c69ff512b2
Autor:
Kim, Gyeongpyo1 (AUTHOR), Park, Seoyoung1 (AUTHOR), Koo, Minsuk2 (AUTHOR) koo@uos.ac.kr, Kim, Sungjun1 (AUTHOR) koo@uos.ac.kr
Publikováno v:
Biomimetics (2313-7673). Sep2024, Vol. 9 Issue 9, p578. 16p.
Publikováno v:
Nanomaterials (2079-4991); Oct2024, Vol. 14 Issue 19, p1575, 27p