Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Gyeo-Re Lee"'
Publikováno v:
Asian-Australasian Journal of Animal Sciences. 26:386-393
This experiment was conducted to evaluate anti-Salmonella enteritidis (anti-SE) bacteriophage as feed additives to prevent Salmonella enteritidis in broilers. The experimental diets were formulated for 2 phases feeding trial, and 3 different levels (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1b3fabf099738629753a7d4adbf8900
https://doi.org/10.5713/ajas.2012.12138
https://doi.org/10.5713/ajas.2012.12138
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1807-1811
The angular distribution (AD) of particles sputtered from a Si substrate in a CHF3 plasma at bias voltages between −200 and −400V was investigated using a specially designed experimental setup for controlling the angle of incident ions on the sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0ff5710159c67cda55f7a1af0168851
https://doi.org/10.1116/1.2221323
https://doi.org/10.1116/1.2221323
Publikováno v:
Surface and Coatings Technology. 193:75-80
This study reports on a new plasma etching technique, using a Faraday cage and neutral beams, that improves the etch profile of an SiO 2 trench in CF 4 and SF 6 plasmas. A Faraday cage, with a top plane made of conductive grids, was placed on the cat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc3cbfd31e04008970e28959f89f53d7
https://doi.org/10.1016/j.surfcoat.2004.08.153
https://doi.org/10.1016/j.surfcoat.2004.08.153
Publikováno v:
Surface and Coatings Technology. :835-838
A porous silica film was treated in an O 2 reactive ion etching (RIE) process, and changes in the film property with ion energy and incident angle were compared with those observed in a conventional ashing process. The production of hydroxyl (–OH)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58a2b6c04c8aab0556119ac35a96325f
https://doi.org/10.1016/s0257-8972(03)00561-9
https://doi.org/10.1016/s0257-8972(03)00561-9
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:404-410
The etching of a secondary SiO2 target, target (2), by ions reflected from a primary SiO2 target, target (1), in a CHF3 plasma using various angles for the ions incident on target (1), θi, was examined. The etch rate of target (2) was enhanced by co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c63e740e54be0a307fa19a3ae58381
https://doi.org/10.1116/1.1540982
https://doi.org/10.1116/1.1540982
Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma
Autor:
Hyun-Kyu Ryu, Sung-Wook Hwang, Yun Seok Cho, Jae-Ho Min, Sang Heup Moon, Yu Chang Kim, Gyeo-Re Lee, Jinwoong Kim
Publikováno v:
Japanese Journal of Applied Physics. 41:5782-5786
The etch characteristics of hydrido-organo-siloxane-polymer (HOSP), a typical silsesquioxane-based low-dielectric material, were compared with those of silicon dioxide in CF4 and CHF3 plasmas. The etch-rate ratios of the two materials are more signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04a93b68a1452de3f78d14f892168ce2
https://doi.org/10.1143/jjap.41.5782
https://doi.org/10.1143/jjap.41.5782
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1574-1581
The effect of etch-product redeposition on sidewall properties during the etching of step-shaped SiO2 patterns in a CF4 plasma was examined using a Faraday cage located in a transformer coupled plasma etcher. Sidewall properties were observed for two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8faf21ead815df2f306cb524b3cf81
https://doi.org/10.1116/1.1494819
https://doi.org/10.1116/1.1494819
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1808-1814
The dependence of the SiO2 etch rate on the angle of ions incident on the substrate surface was studied over a bias voltage range from −20 to −600 V in a high-density CHF3 plasma using a Faraday cage to control the ion incident angle. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39d3e0f14dfc2828fe5ad50d78a33060
https://doi.org/10.1116/1.1503786
https://doi.org/10.1116/1.1503786
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:730-735
The angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma was studied using three types of Faraday cages located in a transformer coupled plasma etcher. The SiO2 substrates were fixed on sample holder slopes that have diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a9ac5aae29735b9dfa9c462a5d1dff
https://doi.org/10.1116/1.1368202
https://doi.org/10.1116/1.1368202
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:2791-2798
SiO2 etch rates in a CF4 plasma were obtained at various surface angles using a Faraday cage with pinholes on the upper plane through which ions are incident on the substrate fixed at various angles inside the cage. The reactive ion etching experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b254ff133087b133f9562a0d11eedee8
https://doi.org/10.1116/1.1318193
https://doi.org/10.1116/1.1318193