Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Gye Mo Yang"'
Publikováno v:
Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p5103, 4p, 1 Chart, 3 Graphs
High-Efficiency GaN-Based Vertical Light-Emitting Diodes with Periodic Beveled Rod-Shaped Structures
Autor:
Jong Hyub Baek, Hyun Ho Park, Gye Mo Yang, Jun Seok Ha, Seong Ran Jeon, Hyung Jo Park, Young Ho Song, Seung Hwan Kim, Sang Hern Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:4325-4329
The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c48e1820a10c3b8f1dac8ab3b412b1ed
https://doi.org/10.1166/jnn.2013.7475
https://doi.org/10.1166/jnn.2013.7475
Autor:
Gye Mo Yang, Sang Hern Lee, Seung-Hwan Kim, Young Ho Song, Hyung Jo Park, Jun Seok Ha, Jong Hyeob Baek, Seong Ran Jeon
Publikováno v:
Journal of Electronic Materials. 42:2435-2438
We report on enhanced efficiency of ultraviolet vertical light-emitting diodes (VLEDs) with interference between the reflective mirror and the multiple quantum well. The dimensions of the cavity are fixed at 30 nm for the p-AlGaN layer, while various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297b833d3f553f8214aac5d0456c896b
https://doi.org/10.1007/s11664-013-2611-2
https://doi.org/10.1007/s11664-013-2611-2
Publikováno v:
Japanese Journal of Applied Physics. 47:5333-5336
GaN-based light-emitting diodes (LEDs) were fabricated on a micro-lens patterned sapphire substrate (ML-PSS). ML patterning on the sapphire substrate was carried out by using photolithography with photo-resist reflow technique and dry etching process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed32a016048651abb640f6c69ed17d8e
https://doi.org/10.1143/jjap.47.5333
https://doi.org/10.1143/jjap.47.5333
Publikováno v:
physica status solidi (c). 2:2104-2108
High-quality crack-free GaN films have been grown on 2-inch diameter Si(111) substrate using AlN/GaN/AlN stack structure by metalorganic chemical vapor deposition. The dislocation density in GaN overlying layer remarkably reduced when introduce the S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66dc6838f81d04bd0e814c7d529a9cdc
https://doi.org/10.1002/pssc.200461283
https://doi.org/10.1002/pssc.200461283
Autor:
Gye Mo Yang, Hyung Koun Cho
Publikováno v:
Journal of Crystal Growth. 243:124-128
We have investigated the relaxation of the misfit strain by the formation of misfit dislocations and stacking faults in high indium content In x Ga 1− x N layers grown by metal-organic chemical vapor deposition. The misfit dislocations in the highl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c12744b541dc38d647d5ec3749432a4d
https://doi.org/10.1016/s0022-0248(02)01492-6
https://doi.org/10.1016/s0022-0248(02)01492-6
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 8:739-743
We demonstrate GaN-based light-emitting diodes (LEDs) with tunnel junction (TJ) structure and surface-emitting light-emitting diodes with TJ current aperture for lateral current confinement. The p/sup +//n/sup +/ GaN TJs are located in the upper clad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ddcdf758c6c7a071292a7da6edf48ee
https://doi.org/10.1109/jstqe.2002.800847
https://doi.org/10.1109/jstqe.2002.800847
Publikováno v:
Japanese Journal of Applied Physics. 41:L761-L764
We have investigated the characteristics of InGaN/GaN blue light-emitting diodes (LEDs) with a Si delta (δ)-doped GaN contact layer. The Si δ-doping could enhance the Si doping concentration and improve the lateral conductivity in the GaN:Si contac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9bc0137fe577aaf9ac87092b503c60
https://doi.org/10.1143/jjap.41.l761
https://doi.org/10.1143/jjap.41.l761
Publikováno v:
Journal of Applied Physics. 91:1166-1170
Influence of strain relaxation on structural and optical properties of the InGaN/GaN multiple quantum wells (MQWs) with high indium composition grown by metalorganic chemical vapor deposition was investigated. From photoluminescence and transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1771806e0bb540717b819887e7b4df8
https://doi.org/10.1063/1.1429765
https://doi.org/10.1063/1.1429765
Publikováno v:
Journal of Crystal Growth. 233:667-672
Structural properties of Si and Mg doped and undoped Al 0.13 Ga 0.87 N layers grown on sapphire substrates by metalorganic chemical vapor deposition were studied using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b412cb1ad56892de57ad93a1464b761
https://doi.org/10.1016/s0022-0248(01)01627-x
https://doi.org/10.1016/s0022-0248(01)01627-x