Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gyanaranjan Pattanaik"'
Autor:
Gyanaranjan Pattanaik, Peter Reilly, Anh Nguyen, Jack Enloe, Michael Flynn, Alison Gracias, Kevin Fealey, Fred Wafula
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 12:43-48
This study addresses the impact of bath stability on electroplated copper for through-silicon via (TSV) in a controlled manufacturing environment. Microstructure, impurities, and other properties of the copper produced were characterized using an arr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6631544989131d3e371b898c9182a57f
https://doi.org/10.4071/imaps.448
https://doi.org/10.4071/imaps.448
Autor:
Anh Nguyen, Jack Enloe, Fred Wafula, Kevin Fealey, Peter Reilly, Alison Gracias, Gyanaranjan Pattanaik, Michael Flynn
Publikováno v:
International Symposium on Microelectronics. 2014:000013-000018
This study addresses the impact of bath stability on electroplated copper for through silicon via (TSV) in a controlled manufacturing environment. Microstructure, impurities and other properties of the copper produced were characterized using an arra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fa5d5bc7d6376b6d6e74ab2606b181
https://doi.org/10.4071/isom-ta13
https://doi.org/10.4071/isom-ta13
Autor:
Tyler Barbera, Gert J. Leusink, Gyanaranjan Pattanaik, Fred Wafula, Larry Smith, Brian Sapp, Victor Vartanian, Toshio Hasegawa, Steve Golovato, Alison Gracias, Kaoru Maekawa, Shan Hu, Steve Olson, Jack Enloe, Kai-Hung Yu, Klaus Hummler
Publikováno v:
International Symposium on Microelectronics. 2014:000001-000007
SEMATECH evaluated the impact of various process options on the overall manufacturing cost of a TSV module, from TSV lithography and etch through post-plate CMP. The purpose of this work was to understand the cost differences of these options in orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d12e43b9cb85bf97de970ea10e38478f
https://doi.org/10.4071/isom-ta11
https://doi.org/10.4071/isom-ta11
Autor:
Tyler Barbera, Klaus Hummler, Gyanaranjan Pattanaik, Larry Smith, Gert J. Leusink, Steve Olson, Brian Sapp, Kai-Hung Yu, Shan Hu, Akira Fujita, Alison Gracias, Jack Enloe, Kaoru Maekawa, Kenneth Matthews, Victor Vartanian, Fred Wafula
Publikováno v:
International Symposium on Microelectronics. 2014:000794-000803
Even as unit processes for high aspect ratio (HAR) through silicon via (TSV) mid-wafer front-side processing are becoming relatively mature, scaling of the TSVs and reduction of cost of ownership (COO) drive significant innovations in processes, equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::847d8b085afbcb5aa5f4947b13ff4eac
https://doi.org/10.4071/isom-thp14
https://doi.org/10.4071/isom-thp14
Publikováno v:
Advanced Materials. 25:3238-3243
By initially depositing a sub-10 nm-thick SnO2 film, the microstructural evolution that is often considered problematic can be utilized to form Sn nanoparticles on the surface of a 3D current collector for enhanced cycling stability. The work describ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d98c337c34be24af2343d9c8b3d26006
https://doi.org/10.1002/adma.201205079
https://doi.org/10.1002/adma.201205079
Publikováno v:
IEEE International Interconnect Technology Conference.
In this paper, physical and electrical results of full wafer direct Cu plating of 2×40 µm TSVs with thin Ru seed are presented. Physical vapor deposition of about 100 nm Cu in the field is shown to improve plating non-uniformity across the structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::758665dc02f0f180e617d039a7c7447e
https://doi.org/10.1109/iitc.2014.6831848
https://doi.org/10.1109/iitc.2014.6831848