Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Gwo-Yuh Shiau"'
Publikováno v:
Journal of Applied Polymer Science. 45:103-109
Barbituric acid (BTA) was used as an initiator for the homopolymerization of bismaleimide (BMI). The reaction was controlled by the amount of barbituric acid and ended up with solvent-soluble oligomers. The effects of varying the amounts of BTA, as w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c898f9e02f93369e54dd88b4f88ff030
https://doi.org/10.1002/app.1992.070450112
https://doi.org/10.1002/app.1992.070450112
Publikováno v:
Journal of Applied Polymer Science. 44:467-476
Barbituric acid (BTA) has a novel influence on glass transition temperature (Tg) of bismaleimide (BMI)–epoxy resin systems. It causes the Tg of a BMI–epoxy resin system to rise significantly. The BTA's influence on Tg was investigated by changing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e75bb729d5db7d8c47042cd2ad79940
https://doi.org/10.1002/app.1992.070440312
https://doi.org/10.1002/app.1992.070440312
Publikováno v:
SPIE Proceedings.
The lithography processes for the metal layers of stacked DRAM have normally been considered as one of the most important steps to determine the chip yield performance. The severe topography step-height on the metal resist processes normally leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2794b0caa1edae23adc5639679ebe7ca
https://doi.org/10.1117/12.175493
https://doi.org/10.1117/12.175493
Autor:
Daniel Hao-Tien Lee, Gwo-Yuh Shiau
Publikováno v:
SPIE Proceedings.
The stacked cell design of DRAM processes for lithography considerations has suffered severe topography step-height and unsmooth surface issues. In addition, the stability and uniformity control of thin film processes on the backend process can affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4abfb3c79600ce7702dbb3d45916a7
https://doi.org/10.1117/12.174163
https://doi.org/10.1117/12.174163
Publikováno v:
SPIE Proceedings.
The striation problem on 8' topographical wafers is reported. The striation on topographical wafers is not observed on planar wafers. The degree of striation increases with topographical step-height for the traditional photoresist dispense method. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b6a12b71ed2cd4c6e04d44883f5f1b
https://doi.org/10.1117/12.150472
https://doi.org/10.1117/12.150472
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.