Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gwen Wyatt-Moon"'
Autor:
Alexander D. Mottram, Pichaya Pattanasattayavong, Ivan Isakov, Gwen Wyatt-Moon, Hendrik Faber, Yen-Hung Lin, Thomas D. Anthopoulos
Publikováno v:
AIP Advances, Vol 8, Iss 6, Pp 065015-065015-8 (2018)
The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the ch
Externí odkaz:
https://doaj.org/article/2ef325fa0b6547eea2226283d504b719
Autor:
Thomas D. Anthopoulos, Ivan Isakov, Yen-Hung Lin, Gwen Wyatt-Moon, Pichaya Pattanasattayavong, Hendrik Faber, Alexander D. Mottram
Publikováno v:
AIP Advances, Vol 8, Iss 6, Pp 065015-065015-8 (2018)
The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12800fe7ccf4645ab4f3ab3c18b585df
https://doaj.org/article/2ef325fa0b6547eea2226283d504b719
https://doaj.org/article/2ef325fa0b6547eea2226283d504b719