Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Gwangryeol Baek"'
Publikováno v:
IEEE Access, Vol 8, Pp 202006-202012 (2020)
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the implementation of high-impedance state 0 in addition to low-impedance states 1 and 2 for the improvement of conventional complementary metal-oxide-semiconductor-NEM (CMOS-NEM)
Externí odkaz:
https://doaj.org/article/ed90b382abc5427d875a58c778579d01
Publikováno v:
IEEE Transactions on Electron Devices. 67:3861-3867
The scaling trends of monolithic 3-D (M3-D) complementary metal–oxide–semiconductor (CMOS) nanoelectromechanical (NEM) reconfigurable logic (RL) circuits are compared with CMOS-only circuits for the first time. It is confirmed that M3-D CMOS-NEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f3b83cf57132858065ffd8bae49b0f8
https://doi.org/10.1109/ted.2020.3008880
https://doi.org/10.1109/ted.2020.3008880
Publikováno v:
IEEE Access, Vol 8, Pp 202006-202012 (2020)
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the implementation of high-impedance state 0 in addition to low-impedance states 1 and 2 for the improvement of conventional complementary metal-oxide-semiconductor-NEM (CMOS-NEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9a7f7e112ba84d708d2ef607cf504f6
https://ieeexplore.ieee.org/document/9249244/
https://ieeexplore.ieee.org/document/9249244/