Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gwangho Baek"'
Autor:
Jin Pyo Hong, Seungmo Yang, Hyunsik Im, Jae Yeon Lee, Taeyoon Kim, Kap Soo Yoon, Gwangho Baek, Jung Yup Yang, Soo Gil Kim
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5aea9e8fdc99c456c53b41a52fe5740
https://doi.org/10.1038/s41598-018-26997-y
https://doi.org/10.1038/s41598-018-26997-y
Autor:
Younhee Lee, Jongsun Lee, Sanghyo Lee, Jung Inn Sohn, Yujin Oh, Jin Pyo Hong, Jong Min Kim, Jea-Gun Park, Wonbae Ko, SeungNam Cha, Gwangho Baek
Publikováno v:
Nano Energy. 12:410-418
Wearable energy harvesting devices are of increasing importance for the realization of flexible smart electronics, as the basic building blocks of power sources are able to convert the mechanical energy induced from body movement to electricity. Here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7755e9325a47d5e2829c40bab152f7f6
https://doi.org/10.1016/j.nanoen.2015.01.009
https://doi.org/10.1016/j.nanoen.2015.01.009
Publikováno v:
Current Applied Physics. 14:S103-S106
We report the structural and optical features of Na-doped ZnO nanowires as a function of Na mole concentration to demonstrate the p-type conduction of Na-doped ZnO nanowires. The samples are prepared on RF-sputtered ZnO seed layers by using a simple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0bf7dbcc5cab4b10fbf3f50372027f4
https://doi.org/10.1016/j.cap.2013.11.014
https://doi.org/10.1016/j.cap.2013.11.014
Publikováno v:
Microelectronic Engineering. 215:110987
The resistive switching characteristics of Pt/TaOx/CuTe devices were investigated with CuTe bottom electrodes deposited under different working pressure. The CuTe bottom electrode was prepared using a magnetron radio-frequency sputtering. The resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd89a7e52ab6c4751fd7dec014dead15
https://doi.org/10.1016/j.mee.2019.110987
https://doi.org/10.1016/j.mee.2019.110987
Autor:
Hyun Hee Chung, Taeyoon Kim, Jong Woo Kim, Byoung Sung You, Minsu Kim, Jin-su Park, Jaeho Lee, Gwangho Baek, Eun-seong Jang, Sang-Don Lee
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 11:121-129
It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6188ab8d62e9804ca00b29cfd5427d90
https://doi.org/10.5573/jsts.2011.11.2.121
https://doi.org/10.5573/jsts.2011.11.2.121
Autor:
Gwangho Baek
Publikováno v:
Japanese Journal of Applied Physics. 57:124201
Resistive switching memories are the most promising candidate for next-generation nonvolatile memory devices. Resistive switching behavior is believed to be induced by the formation and rupture of conductive filaments between the electrodes, but the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93a56b05a9d69f6516effdb84e3aa00c
https://doi.org/10.7567/jjap.57.124201
https://doi.org/10.7567/jjap.57.124201