Zobrazeno 1 - 9 of 9 pro vyhledávání: '"GwangTae Kim"'
1
The world’s first 1Hz-refresh-rate liquid crystal display for low power consumption
Autor: DaYeon Lee, HanByeol Park, Ha Young Jung, Junho Jung, Seung-Hwa Baek, Jong-Wook Jung, Sun-Mi Park, Ki-Sun Kwon, Heui-Seok Jin, Dong-Jin Lee, GwangTae Kim, JeongKi Park, Seung Hee Lee, MinSu Kim
Global energy policies urge us to reduce the power consumption of electronic devices, but it is inconsistent with the user’s needs of enhancing device performances, which discourages the global energy consumption requirement. In this work, the conv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1bf8448966698669dc2bae2d18839c2e
https://doi.org/10.21203/rs.3.rs-2977463/v1
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2
Minimization of halo mura in homogenous alignment liquid crystal displays via a dichroic light absorber [Invited]
Autor: Young Jin Lim, Hyun Soo Jeon, Yeon Jin Han, Junho Jung, Wontaeck Kim, Yong Hak Park, GwangTae Kim, JeongKi Park, MinSu Kim, Seung Hee Lee
Publikováno v: Optical Materials Express. 13:1563
Local dimming technology enables high dynamic range liquid crystal displays (LCDs). However, when displaying a bright image in a dark background, so-called halo mura (halation caused by local light leakage in oblique viewing directions) appears and d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::385043a786d4142f8594ab100dce6859
https://doi.org/10.1364/ome.491801
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6
Abnormal double-hump phenomenon in amorphous In-Ga-Zn-O thin-film transistor under positive gate bias temperature stress
Autor: Ohyun Kim, GwangTae Kim, Hoon Jeong, Tae-Kyoung Ha, JeongKi Park, Yongjo Kim, SangHee Yu
Publikováno v: Solid-State Electronics. 172:107875
This paper presents an investigation of the abnormal hump phenomenon in amorphous indium gallium zinc oxide thin-film transistors under positive gate bias and temperature stress (PBTS). During PBTS, the current-voltage curve shows a severe hump and a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be3821fdb34bc77ef60354d0ea5e26c1
https://doi.org/10.1016/j.sse.2020.107875
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7
Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress
Autor: Tae-Kyoung Ha, Hun Jeong, SangHee Yu, Ohyun Kim, Yun-Seong Kang, GwangTae Kim, Yongjo Kim, Yong-Jung Cho, Jeong Ki Park
Publikováno v: Solid-State Electronics. 167:107785
This paper demonstrates degradation of amorphous indium gallium zinc oxide thin-film transistors under AC current stress (ACS), which is unipolar AC drain bias applied with positive static gate-bias stress. Under ACS, a severe hump occurs in current-
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b57d8398edaa8633055b704b8238a36c
https://doi.org/10.1016/j.sse.2020.107785
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8
Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors
Autor: Jeong Ki Park, Hoon Jeong, GwangTae Kim, Tae-Kyoung Ha, Ohyun Kim, Yun-Seong Kang, SangHee Yu, Yong-Jung Cho, Yongjo Kim
Publikováno v: Solid-State Electronics. 165:107752
On-current ION and field effect mobility μFE changed abnormally by drain bias illumination stress (DBIS) in amorphous InGaZnO thin-film transistors. First, ION dropped to 35% of its initial value and μFE decreased from 11.8 cm2/(V∙s) to 3.0 cm2/(
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::701ae83d72e8c4a71d246e45292789ff
https://doi.org/10.1016/j.sse.2019.107752
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9
An efficient algorithm for frequency estimation from cosine-sum windowed DFT coefficients
Autor: Gwangtae Kim, Chulhyun Kwak, Donghoon Shin
Publikováno v: Signal Processing. 166:107245
This paper presents an algorithm for estimating frequency of a complex sinusoid from three DFT coefficients. In particular, we consider the case where the signal is multiplied by a generic cosine-sum window for interference suppression. The algorithm
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02c6c00e85d20ebb99a55ac75e446d54
https://doi.org/10.1016/j.sigpro.2019.107245
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