Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Gwan-Ha Kim"'
Autor:
Han Byeol Lee, Young-Hee Joo, Harshada Patil, Gwan-Ha Kim, Insu Kang, Bo Hou, Deok-kee Kim, Doo-Seung Um, Chang-Il Kim
Publikováno v:
Materials Research Express, Vol 10, Iss 1, p 016401 (2023)
Due to its high dielectric constant ( κ ), the BaTiO _3 (BTO) thin film has significant potential as a next-generation dielectric material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, the evaluation of the BTO thin film e
Externí odkaz:
https://doaj.org/article/54e6b07317d74be7ba8b66811ac6db40
Autor:
Doo-Seung Um, Mi-Jin Jin, Jong-Chang Woo, Dong-Pyo Kim, Jungmin Park, Younghun Jo, Gwan-Ha Kim
Publikováno v:
Crystals, Vol 11, Iss 4, p 351 (2021)
Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS2-MoSX using sputter deposition and investigate the electronic properties
Externí odkaz:
https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859
Publikováno v:
Transactions on Electrical and Electronic Materials. 23:569-577
Autor:
Hyun-Ju Cho, Suk-Jun Kim, Kyung-Duck Kim, Sung-Pil Cho, In-Sun Tak, Gwan-Ha Kim, Byung-Joon Moon, Dong Hwan Kim, Yong-Soo Lee, Sang-In Kim, Hyun Tae Kim, Joonyong Cho
Publikováno v:
Applied Optics. 61:8446
A polarization-independent multilayer dielectric diffraction grating with a low aspect ratio and high diffraction efficiency was designed and fabricated. The diffraction grating designed with a grating density of 1200 lines/mm had an aspect ratio of
Publikováno v:
Plasma Science and Technology. 24:075504
Al-doped ZnO (AZO) is considered as an alternative to transparent conductive oxide materials. Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for
Publikováno v:
Science of Advanced Materials. 9:1213-1216
Autor:
Mi-Jin Jin, Gwan-Ha Kim, Doo-Seung Um, Jungmin Park, Younghun Jo, Dong-Pyo Kim, Jong-Chang Woo
Publikováno v:
Crystals
Volume 11
Issue 4
Crystals, Vol 11, Iss 351, p 351 (2021)
Volume 11
Issue 4
Crystals, Vol 11, Iss 351, p 351 (2021)
Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS2-MoSX using sputter deposition and investigate the electronic properties
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 23:353-357
Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigati
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:821-825
During the etching process, the wafer surface temperature is an important parameter which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the redeposition of reaction products on feature surfaces. I
Publikováno v:
Ferroelectrics. 381:30-40
In this study, we changed two input parameters (pressure vs. gas mixing ratio, RF power and DC bias voltage) and then monitored the effect on HfO 2 etch rate and selectivity with Si 3 N 4 and SiO 2...