Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Gvidas Astromskas"'
Autor:
Justina Gaidukevič, Rasa Pauliukaitė, Gediminas Niaura, Ieva Matulaitienė, Olga Opuchovič, Aneta Radzevič, Gvidas Astromskas, Virginijus Bukauskas, Jurgis Barkauskas
Publikováno v:
Nanomaterials, Vol 8, Iss 11, p 889 (2018)
The melt of H3BO3 was used to reach a controllable reduced graphene oxide (rGO) synthesis protocol using a graphene oxide (GO) precursor. Thermogravimetric analysis and differential scanning calorimetry (TG/DSC) investigation and scanning electron mi
Externí odkaz:
https://doaj.org/article/34d948432bb447bc81efa5a386439738
Autor:
A. Sakavičius, Virginijus Bukauskas, Viktorija Nargelienė, Ieva Matulaitienė, Arūnas Šetkus, Gvidas Astromskas, Algimantas Lukša
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:M77-M81
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7add2b38f75c4aae26a71196d05def5
https://doi.org/10.1149/2.0201805jss
https://doi.org/10.1149/2.0201805jss
Autor:
Algimantas Lukša, Gvidas Astromskas, M. Treideris, Arūnas Šetkus, A. Sakavičius, I. Ignatjev, Gediminas Niaura, M. Kamarauskas, Viktorija Nargelienė, Virginijus Bukauskas
Publikováno v:
Thin Solid Films. 698:137850
The properties of the planar junction between graphene layer and thin film metal structures are important for formation of the electronic devices integrating the structures of the two-dimensional materials. However, the properties of the graphene-met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::902dfdab7f84a2d774a4ce82fd9e2359
https://doi.org/10.1016/j.tsf.2020.137850
https://doi.org/10.1016/j.tsf.2020.137850
Autor:
Gediminas Niaura, Justina Gaidukevič, Virginijus Bukauskas, Olga Opuchovic, Ieva Matulaitienė, Aneta Radzevič, Rasa Pauliukaitė, Jurgis Barkauskas, Gvidas Astromskas
Publikováno v:
Nanomaterials, Basel : MDPI, 2018, vol. 8, no. 11, art. no. 889, p. [1-17]
Nanomaterials, Vol 8, Iss 11, p 889 (2018)
Nanomaterials
Volume 8
Issue 11
Nanomaterials, Vol 8, Iss 11, p 889 (2018)
Nanomaterials
Volume 8
Issue 11
The melt of H3BO3 was used to reach a controllable reduced graphene oxide (rGO) synthesis protocol using a graphene oxide (GO) precursor. Thermogravimetric analysis and differential scanning calorimetry (TG/DSC) investigation and scanning electron mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ab1166123c92fe20797b710bc61ea67
https://repository.vu.lt/VU:ELABAPDB32120788&prefLang=en_US
https://repository.vu.lt/VU:ELABAPDB32120788&prefLang=en_US
Autor:
Ravi Droopad, Georgios Vellianitis, Carlos H. Diaz, Peter Ramvall, Chien-Hsun Wang, Matthias Passlack, Lars Samuelson, Gvidas Astromskas, Martin Christopher Holland, Lars-Erik Wernersson
Publikováno v:
Journal of Crystal Growth. 374:43-48
We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf5f42f7afc73cda753d5f1a77d83e8
https://doi.org/10.1016/j.jcrysgro.2013.03.044
https://doi.org/10.1016/j.jcrysgro.2013.03.044
Publikováno v:
physica status solidi c. 6:1399-1402
We demonstrate a pulse generator based on a GaAs-AlGaAs gated resonant tunneling diode (RTD). This is realized by integrating a third terminal, the gate, into the current path of a RTD. The gate consists of a 200 A thick tungsten grating buried 300 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3925d561010a629c9e94647662556653
https://doi.org/10.1002/pssc.200881503
https://doi.org/10.1002/pssc.200881503
Autor:
E.J.C. Nilsson, Gvidas Astromskas, Charlotta Nilsson, Mattias Olsson, Per Kristiansson, Jan Pallon, Mikael Elfman, N. Arteaga-Marrero
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:2117-2121
The Lund Nuclear Microprobe (LNM) has been adapted to be used as a Single Ion Hit Facility (SIHF) for proton cell irradiation experiments at low dose. In order to test the capabilities of the system, Ni dot arrays and artificial cells have been fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c65ce27ff0cdaa338983c9ad09d05b1
https://doi.org/10.1016/j.nimb.2009.03.009
https://doi.org/10.1016/j.nimb.2009.03.009
Publikováno v:
IEEE Microwave and Wireless Components Letters. 19:386-388
We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f41cb4f57751a43bea30bed7398d305
https://doi.org/10.1109/lmwc.2009.2020029
https://doi.org/10.1109/lmwc.2009.2020029
Autor:
Kristian Storm, Lars-Erik Wernersson, Erik Lind, Gvidas Astromskas, Philippe Caroff, Magnus T. Borgström
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩
Microelectronic Engineering, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩
Microelectronic Engineering, Elsevier, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩
Microelectronic Engineering, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩
InAs/HfO"2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10kHz to 10MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8nm-thick HfO"2 layer by atomic layer deposition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b4faa342f33a37264d95ee38dd25601
https://hal.archives-ouvertes.fr/hal-00592100
https://hal.archives-ouvertes.fr/hal-00592100
Autor:
Philippe Caroff, Gvidas Astromskas, Magnus T. Borgström, Kristian Storm, Olov Karlström, Lars-Erik Wernersson
Publikováno v:
Journal of Applied Physics; 108, no 054306 (2010)
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2010, 108, pp.054306-1-5. ⟨10.1063/1.3475356⟩
Journal of Applied Physics, 2010, 108, pp.054306-1-5. ⟨10.1063/1.3475356⟩
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2010, 108, pp.054306-1-5. ⟨10.1063/1.3475356⟩
Journal of Applied Physics, 2010, 108, pp.054306-1-5. ⟨10.1063/1.3475356⟩
Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f16709486184dcd86fe43053bffb1bb
https://lup.lub.lu.se/record/1712477
https://lup.lub.lu.se/record/1712477