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Autor:
Nikolaev, Vladimir, Polyakov, Alexander Y., Stepanov, S.I., Pechnikov, Aleksey, Guzilova, Liubov, Scheglov, Michail, Chikiryaka, A.V.
In this work, we study the thermal stabilization of metastable α-Ga2O3 in growth experiments. Gallium oxide films are grown on c- and r-plane sapphire substrates by halide vapor phase epitaxy (HVPE) at the temperature range of 450-690 oC. The surfac
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