Zobrazeno 1 - 10
of 549
pro vyhledávání: '"Guziewicz E"'
Autor:
Syryanyy, Y., Zając, M., Guziewicz, E., Wozniak, W., Melikhov, Y., Chernyshova, M., Ratajczak, R., Demchenko, I.N.
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2022 144
Autor:
Schifano, R., Dluzewski, P., Zajkowska, W., Kurowska, B., Krajewski, T.A., Jakiela, R., Luka, G., Witkowski, B.S., Jarosz, D., Minikayev, R., Wierzbicka, A., Goscinski, K., Kopalko, K., Guziewicz, E., Smertenko, P.S.
Publikováno v:
In Applied Surface Science 30 June 2021 552
Publikováno v:
Acta Physica Polonica A116, 918 (2009)
ZnCoO is one of the most studied and promising semiconductor materials for spintronics applications. In this work we discuss optical and electrical properties of ZnCoO films and nanoparticles grown at low temperature by either Atomic Layer Deposition
Externí odkaz:
http://arxiv.org/abs/1401.4873
Autor:
Guziewicz, E., Godlewski, M., Wachnicki, L., Krajewski, T. A., Luka, G., Gieraltowska, S., Jakiela, R., Stonert, A., Lisowski, W., Krawczyk, M., Sobczak, J. W., Jablonski, A.
Publikováno v:
Semiconductor Science and Technology 27 (2012)074011 (11p)
The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free
Externí odkaz:
http://arxiv.org/abs/1308.2064
Autor:
Łukasiewicz, M. I., Wójcik-Głodowska, A., Guziewicz, E., Wolska, A., Klepka, M. T., Dłużewski, P., Jakieła, R., Łusakowska, E., Kopalko, K., Paszkowicz, W., Wachnicki, Ł., Witkowski, B. S., Lisowski, W., Krawczyk, M., Sobczak, J. W., Jabłoński, A., Godlewski, M.
Publikováno v:
Semiconductor Science and Technology 27 (2012) 074009
Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-unifo
Externí odkaz:
http://arxiv.org/abs/1308.2057
Autor:
Godlewski, M., Łukasiewicz, M. I., Guziewicz, E., Ivanov, V. Yu., Owczarczyk, Ł., Witkowski, B. S.
Publikováno v:
Optical Materials 34 (2012) 2045-2049
Optical and magneto-optical properties of ZnCoO films grown at low temperature by Atomic Layer Deposition are discussed. Strong wide band absorption, with onset at about 2.4 eV, is observed in ZnCoO in addition to Co-related intra-shell transitions.
Externí odkaz:
http://arxiv.org/abs/1308.2050
Autor:
Grabecki, G., Wróbel, J., Czapkiewicz, M., Cywiński, Ł., Gierałtowska, S., Guziewicz, E., Zholudev, M., Gavrilenko, V., Mikhailov, N. N., Dvoretski, S. A., Teppe, F., Knap, W., Dietl, T.
Publikováno v:
Phys. Rev. B 88, 165309 (2013)
We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by t
Externí odkaz:
http://arxiv.org/abs/1307.6115
Autor:
Sawicki, M., Guziewicz, E., Lukasiewicz, M. I., Proselkov, O., Kowalik, I. A., Lisowski, W., Dluzewski, P., Wittlin, A., Jaworski, M., Wolska, A., Paszkowicz, W., Jakiela, R., Witkowski, B. S., Wachnicki, L., Klepka, M. T., Luque, F. J., Arvanitis, D., Sobczak, J. W., Krawczyk, M., Jablonski, A., Stefanowicz, W., Sztenkiel, D., Godlewski, M., Dietl, T.
Publikováno v:
Phys. Rev. B 88, 085204 (2013)
A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient t
Externí odkaz:
http://arxiv.org/abs/1201.5268
Autor:
Gieraltowska, S., Sztenkiel, D., Guziewicz, E., Godlewski, M., Luka, G., Witkowski, B. S., Wachnicki, L., Lusakowska, E., Dietl, T., Sawicki, M.
Publikováno v:
Acta Physica Polonica A 119 (2011) 333-336
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thic
Externí odkaz:
http://arxiv.org/abs/1107.5401
Autor:
Lukasiewicz, M. I., Witkowski, B., Godlewski, M., Guziewicz, E., Sawicki, M., Paszkowicz, W., Lusakowska, E., Jakiela, R., Krajewski, T., Kowalik, I. A., Kowalski, B. J.
Publikováno v:
Acta Physica Polonica A 116 (2009) 921-923
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc
Externí odkaz:
http://arxiv.org/abs/1107.5196