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Autor:
Guziewicz, Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, Marek
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4381
The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, ch