Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Guy Turban"'
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2005, 14, pp.891-895. ⟨10.1016/j.diamond.2004.10.011⟩
Diamond and Related Materials, 2005, 14, pp.891-895. ⟨10.1016/j.diamond.2004.10.011⟩
Diamond and Related Materials, Elsevier, 2005, 14, pp.891-895. ⟨10.1016/j.diamond.2004.10.011⟩
Diamond and Related Materials, 2005, 14, pp.891-895. ⟨10.1016/j.diamond.2004.10.011⟩
This paper is dedicated to carbon nanotubes grown by electron cyclotron resonance plasma-enhanced chemical vapour deposition. It has been shown that carbon nanotubes (CNTs) can be grown at temperature as low as 550 °C by this technique. X-ray photoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7841e204eab0d0d956315322978c42db
https://doi.org/10.1016/j.diamond.2004.10.011
https://doi.org/10.1016/j.diamond.2004.10.011
Publikováno v:
Thin Solid Films. 471:123-127
Silicon dioxide films are deposited on silicon substrates from oxygen/tetraethoxysilane (TEOS) plasmas in a helicon reactor operated at low pressure (5 mtorr). The effect of the negative dc self-bias voltage V b (0 to −200 V) on structural and elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b263c0ed3d7bc27c5200c87a78f5b05d
https://doi.org/10.1016/j.tsf.2004.04.065
https://doi.org/10.1016/j.tsf.2004.04.065
Publikováno v:
Surface and Coatings Technology. :49-54
We focus here on the particular case of radio frequency (RF-13.56 MHz) planar magnetrons from fundamental point of view, which is supported by experiments. The description of the power coupled to the discharge through the plasma bulk electrons can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4187f0eedf768d882277a3b0798f6c04
https://doi.org/10.1016/s0257-8972(03)00621-2
https://doi.org/10.1016/s0257-8972(03)00621-2
Autor:
Guy Turban, David Eon, Christophe Cardinaud, F. Gaboriau, Laetitia Rolland, M. C. Peignon, Gilles Cartry
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:919-927
We are interested in the silicon oxide deep etching by inductively coupled fluorocarbon plasmas for integrated optical applications. The understanding and the improvement of this process requires to know at least the electrical characteristics of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae8a1a1bda3efbff7feb456d122c0b0f
https://doi.org/10.1116/1.1474419
https://doi.org/10.1116/1.1474419
Publikováno v:
Surface and Coatings Technology. :175-179
Carbon nitride thin films were deposited by RF magnetron sputtering of a graphite target in a pure N 2 or mixed Ar/N 2 plasma. The effect of nitrogen incorporation on the growth kinetics, composition, structure and type of bonding of CN x films in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d2b6cbd97f8e7a9f8cbf9afa4748c9
https://doi.org/10.1016/s0257-8972(01)01569-9
https://doi.org/10.1016/s0257-8972(01)01569-9
Publikováno v:
Plasmas and Polymers. 7:341-352
Low-dielectric constant (low-k) films have been prepared by plasma-enhanced chemical vapor deposition from hexamethyldisiloxane (HMDSO). The films are analyzed by ellipsometry, infrared absorption spectroscopy while their electrical properties are de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab94cbe7b06daaf54d42b7345444ad4d
https://doi.org/10.1023/a:1021381003259
https://doi.org/10.1023/a:1021381003259
Publikováno v:
Diamond and Related Materials. 10:1142-1146
This work is devoted to the study of the reactive plasma beam sputtering deposition of carbon nitride thin films. To investigate the variations of the bonding structure, induced by modifying the main deposition parameters, a systematic characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693d0ebe1d414d4cdae5f766ab88307d
https://doi.org/10.1016/s0925-9635(00)00384-8
https://doi.org/10.1016/s0925-9635(00)00384-8
Publikováno v:
ResearcherID
SiO2-like films are deposited in a low-pressure rf helicon reactor using oxygen-rich O2/TEOS (tetraethoxysilane) mixtures. A model based on the deposition rate variation with the distance to the TEOS injection is used to estimate the TEOS electron-im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6df35c5bcd3bbabf61f8d7180fa13f8
https://doi.org/10.1116/1.1319820
https://doi.org/10.1116/1.1319820
Publikováno v:
Journal of Applied Physics. 87:7524-7532
Amorphous nitrogenated carbon (a-CNx) films have been prepared from a mixture of acetylene and nitrogen gas in an electron cyclotron resonance plasma and characterized by electron energy-loss spectroscopy (EELS), spectroscopic ellipsometry (SE), Four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ac8c70a163756504399f2bc4871a38c
https://doi.org/10.1063/1.373018
https://doi.org/10.1063/1.373018
Publikováno v:
Diamond and Related Materials. 9:573-576
Hydrogenated amorphous carbon nitride (a-C:H:N) films were deposited at low pressure (2.6 mTorr) by plasma enhanced chemical vapor deposition in a dual electron cyclotron resonance–radio frequency discharge from CH4/N2 mixtures. Competitive deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ddaa4971ec5eca2f18e8dc58496761b
https://doi.org/10.1016/s0925-9635(99)00263-0
https://doi.org/10.1016/s0925-9635(99)00263-0