Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Guy Parat"'
Autor:
Guy Parat, Alain Sylvestre, Denis Buttard, Frédéric Voiron, Sandrine Madassamy, Aude Lefevre, Anh Phuong Nguyen
Publikováno v:
MRS Proceedings. 1805
Due to its wide band-gap, Al2O3 is known to have a moderate leakage current and a good dielectric strength [1]. Moreover, this dielectric has a fair permittivity and so constitutes interesting candidate as dielectric for Metal-Insulator-Metal (MIM) c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37f1b68fa49203052d0d7b787f008b07
https://doi.org/10.1557/opl.2015.733
https://doi.org/10.1557/opl.2015.733
Autor:
Guy Parat, Aude Lefevre, Malte Czernohorsky, Delphine Ferreira, Marc Veillerot, Jean-Paul Barnes, Florent Lallemand
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:01A111
Metal–insulator–metal (MIM) capacitors with TiN and high thickness of Al2O3 above 50 nm were fabricated to address high voltage (>30 V) and linear capacitor applications. Atomic layer deposition is used to deposit both TiN and Al2O3 to guarantee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc028d7dc9bb0de99098fbf39cbbebb
https://doi.org/10.1116/1.4972232
https://doi.org/10.1116/1.4972232
Autor:
Gilles Simon, Philippe D'hiver, Guy Parat, Jean-Charles Souriau, Renzo Dal Molin, Karima Amara, Laetitia Castagne
Publikováno v:
2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
The objective of this paper is to present a new technology that integrates a Micro Electro-Mechanical Systems (MEMS) accelerometer and an Application-Specific Integrated Circuit (ASIC) chip encapsulated in a hermetic silicon box that could be embedde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc462169e2140290b1fdfe46750567ec
https://doi.org/10.1109/ectc.2014.6897443
https://doi.org/10.1109/ectc.2014.6897443
Autor:
Alexandre Reinhardt, Nicolas Buffet, Alexandre Shirakawa, Jean Baptiste David, Guy Parat, Marc Aid, Sylvain Joblot, Pascal Ancey
Publikováno v:
2007 IEEE Ultrasonics Symposium Proceedings.
A theoretical approach of the frequency trimming of BAW filters is presented. We discuss the way to integrate this step already in the design stage by considering the frequency adjustment of worst cases. In particular, we show that the frequency trim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5277c7a9a2c36198b98a907716811d56
https://doi.org/10.1109/ultsym.2007.363
https://doi.org/10.1109/ultsym.2007.363