Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Guy M. Cohen"'
Autor:
Stephen S. Leonard, Guy M. Cohen, Allison J. Kenyon, Diane Schwegler-Berry, Natalie R. Fix, Sarunya Bangsaruntip, Jenny R. Roberts
Publikováno v:
Environmental Health Insights, Vol 2014, Iss Suppl. 1, Pp 21-29 (2014)
Externí odkaz:
https://doaj.org/article/201405c1bcbe46039411478fbfd1b771
Autor:
Vadim Tokranov, Serge Oktyabrsky, Michael Yakimov, Kevin W. Brew, Rubab Ume, Haibo Gong, Devendra K. Sadana, Sandra Schujman, Guy M. Cohen, Nathaniel C. Cady, Karsten Beckmann
Publikováno v:
DRC
Among various phase-change memory materials (PCMs), Ge 2 Sb 2 Te 5 (GST) is an outstanding representative, widely used in both optical storage and electronic memories [1] . The intrinsic drawbacks of this GST, however, such as tellurium volatility an
Publikováno v:
Journal of Biomedical Informatics
In this study, we address three important challenges related to disease transmissions such as the COVID-19 pandemic, namely, (a) providing an early warning to likely exposed individuals, (b) identifying individuals who are asymptomatic, and (c) presc
Autor:
Sandra Schujman, Guy M. Cohen, Michael Yakimov, Karsten Beckmann, Haibo Gong, Devendra K. Sadana, Rubab Ume, Serge Oktyabrsky, Kevin W. Brew, Christian Lavoie, Vadim Tokranov, Nathaniel C. Cady
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:075008
Material properties of Al-Sb binary alloy thin films deposited under ultra-high vacuum conditions were studied for multi-level phase change memory applications. Crystallization of this alloy was shown to occur in the temperature range of 180 °C–28
Autor:
Martin M. Frank, Robert L. Bruce, Effendi Leobandung, Christian Lavoie, Michael F. Lofaro, John Bruley, Heinz Schmid, Cheng-Wei Cheng, Pouya Hashemi, John A. Ott, Christopher P. D'Emic, R. Mo, William T. Spratt, Guy M. Cohen, Sungjae Lee, Vijay Narayanan, Lukas Czornomaz, J. Patel, T. Ando, Xiao Sun, Hiroyuki Miyazoe
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We report InGaAs gate-all-around nanosheet NFETs on Si substrate using template-assisted-selective-epitaxy (TASE) and a gate-last process with thermal budget advantages. Compared to our early report of the TASE process, in this paper we demonstrate t
Autor:
Sanghoon Lee, Marinus Hopstaken, Christian Lavoie, Michael R. Saccomanno, David Memram, Moti Katz, Arnold Bloom, Doron Cohen Elias, S. Shusterman, Guy M. Cohen, Renee Mo, Will Spratt, Shmuel Saad
Publikováno v:
Journal of Vacuum Science & Technology A. 38:052410
We report on the growth and doping of InAs by atomic layer epitaxy (ALE). The InAs layers were grown using ALE cycles in a metal organic chemical vapor deposition reactor, and Si doping of the films was studied for different SiH4 flow sequences. When
Publikováno v:
Microscopy and Microanalysis. 17:889-895
The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dua
Autor:
Robert S. Chau, Kang L. Wang, Theodore I. Kamins, Lars-Erik Wernersson, M. Jagadesh Kumar, Gehan A. J. Amaratunga, Bin Yu, Guy M. Cohen, M. Meyyappan, Chongwu Zhou, David B. Janes, Mark A. Reed, Mark Lundstrom, Charles M. Lieber
Publikováno v:
IEEE Transactions on Nanotechnology. 7:643-650
Autor:
Leathen Shi, Guy M. Cohen, Sarunya Bangsaruntip, Shimon Levi, Deborah A. Neumayer, Alfred Grill, Konstantin Chirko, Ofer Adan
Publikováno v:
SPIE Proceedings.
For Gate-all-around (GAA) MOSFETs the nanowires are suspended between source and drain anchors allowing conformal deposition of the gate around (i.e., GAASiNW) the silicon nanowire channel. 3DSEM measurement show that silicon wires tend to buckle bet
Autor:
Kathryn W. Guarini, Guy M. Cohen, H.J. Hovel, J. Benedict, C. Cabral, K. Petrarca, Diane C. Boyd, Raymond M. Sicina, J.H. Yoon, J. Newbury, P. Kozlowski, Paul M. Solomon, Hon-Sum Philip Wong, Christopher P. D'Emic, A. Krasnoperova, M. Ronay, K.K. Chan, V. Ku, O. Dokumaci, Christian Lavoie, Inna V. Babich, J.J. Bucchignano, E.C. Jones, J. Treichler, Y. Zhang
Publikováno v:
IEEE Circuits and Devices Magazine. 19:48-62
A planar self-aligned double-gate MOSFET process has been implemented where a unique sidewall source/drain structure (S/D) permits self-aligned patterning of the back-gate layer after the S/D structure is in place. This allows coupling the silicon th