Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Guy C. Wicker"'
Publikováno v:
Proceedings of the IEEE. 107:1457-1463
Stanford Ovshinsky (1922–2012) was a prolific independent inventor who ended up with more than 400 patents.1 Many of his inventions were motivated by his strong social concerns. His commitment to replacing fossil fuels, which began before 1960 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa18b7e455928fb159d4f6cdb7919ca4
https://doi.org/10.1109/jproc.2019.2917118
https://doi.org/10.1109/jproc.2019.2917118
Autor:
Boil Pashmakov, Guy C. Wicker
Publikováno v:
NVMTS
In 1955 Stan Ovshinsky proposed a model of the cognitive behavior of neurons. This led directly to his development of chalcogenide memory and threshold switching devices in 1963. Now five years after his death, 3DXPoint memory is a commercial reality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8e20b81b9b24538dbd4b70eeac7aa5
https://doi.org/10.1109/nvmts.2017.8171312
https://doi.org/10.1109/nvmts.2017.8171312
Autor:
Guy C. Wicker, Semyon D. Savransky
Publikováno v:
MRS Proceedings. 1251
The results of calorimetric and electrical studies of bulk Ge2Sb2Te5 and GeSb2Te4 alloys around melting temperature Tm are presented together with characteristics of phase-change memory devices from such alloys. The endothermic melting region is wide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60801cd321e4e1bf8e594db75d80931f
https://doi.org/10.1557/proc-1251-h03-02
https://doi.org/10.1557/proc-1251-h03-02
Autor:
Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender
Publikováno v:
MRS Proceedings. 1160
We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324f69b10eb11a49f55d1e3ecfd59c1a
https://doi.org/10.1557/proc-1160-h14-11
https://doi.org/10.1557/proc-1160-h14-11
Autor:
Guy C. Wicker
Publikováno v:
MRS Proceedings. 918
This paper discusses the modeling of phase change, chalcogenide alloy, electrical memory devices. Optical disk modeling, which uses the same alloys has yielded a good understanding of how the material's structural change is related to temperature, ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::010724d6cbbd206310b10f15a198adb4
https://doi.org/10.1557/proc-0918-h05-06-g06-06
https://doi.org/10.1557/proc-0918-h05-06-g06-06
Autor:
Stephen J. Hudgens, Sergey A. Kostylev, Tyler Lowrey, Charles H. Dennison, Guy C. Wicker, Wally Czubatyj
Publikováno v:
MRS Proceedings. 803
Phase change memory devices were originally reported by S. R. Ovshinsky [1] in 1968. A 256-bit phase-change memory array based on chalcogenide materials was reported in 1970 [2], Recent advances in phase change materials, memory device designs, and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2135c86e00759a72bb7cb8267ba49a3a
https://doi.org/10.1557/proc-803-hh2.1
https://doi.org/10.1557/proc-803-hh2.1
Publikováno v:
2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484).
An electrically reprogrammable resistor approach has been developed as a basis for a new nonvolatile memory that is potentially denser, faster, and easier to make than Dynamic RAM (DRAM). It relies on structural phase transitions induced by nanosecon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f9eb6dcd726d5d8ed9c24ca41bea356
https://doi.org/10.1109/aero.2000.878512
https://doi.org/10.1109/aero.2000.878512
Autor:
Guy C. Wicker
Publikováno v:
SPIE Proceedings.
Ovonyx, Inc. is developing a nonvolatile memory that is potentially denser, faster, and easier to make than Dynamic RAM. It relies on phase transitions induced by nanosecond heating and cooling of small regions of the memory cell. Initial target mark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1710fbe47e0ce9961a9ad7afe4a79f36
https://doi.org/10.1117/12.364449
https://doi.org/10.1117/12.364449
Publikováno v:
IEEE Electron Device Letters. 10:349-351
A polycrystalline-silicon (poly-Si) thin-film transistor (TFT) deposited at low temperature on Corning 7059 glass is reported. It has practical applications for low-cost thin-film display and imaging electronics manufacturing. All the process steps u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c43ee3cd700af3536ab3499b5f5890ac
https://doi.org/10.1109/55.31753
https://doi.org/10.1109/55.31753
Autor:
Lowrey, Tyler A., Hudgens, Stephen J., Czubatyj, Wally, Dennison, Charles H., Kostylev, Sergey A., Wicker, Guy C.
Publikováno v:
MRS Online Proceedings Library; 2003, Vol. 803 Issue 1, p113-124, 12p