Zobrazeno 1 - 10
of 305
pro vyhledávání: '"Guus, Rijnders"'
Autor:
Sizhao Huang, Evert Houwman, Nicolas Gauquelin, Andrey Orekhov, Dmitry Chezganov, Johan Verbeeck, Sixia Hu, Gaokuo Zhong, Gertjan Koster, Guus Rijnders
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 19, Pp n/a-n/a (2024)
Abstract Lead based bulk piezoelectric materials, e.g., PbZrxTi1‐xO3 (PZT), are widely used in electromechanical applications, sensors, and transducers, for which optimally performing thin films are needed. The results of a multi‐domain Landau–
Externí odkaz:
https://doaj.org/article/eb2beba0d3c7400f91184fa02e0276bb
Autor:
Yuhao Hong, Long Wei, Qinghua Zhang, Zhixiong Deng, Xiaxia Liao, Yangbo Zhou, Lei Wang, Tongrui Li, Junhua Liu, Wen Xiao, Shilin Hu, Lingfei Wang, Lin Li, Mark Huijben, Yulin Gan, Kai Chen, Gertjan Koster, Guus Rijnders, Zhaoliang Liao
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Abstract Designing a broad-spectrum gas sensor capable of identifying gas components in complex environments, such as mixed atmospheres or extreme temperatures, is a significant concern for various technologies, including energy, geological science,
Externí odkaz:
https://doaj.org/article/926ffbe540ec4b608cfbded29ee39163
Autor:
Zeinab Eftekhari, Nasim Rezaei, Hidde Stokkel, Jian-Yao Zheng, Andrea Cerreta, Ilka Hermes, Minh Nguyen, Guus Rijnders, Rebecca Saive
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 14, Iss 1, Pp 1059-1067 (2023)
In this work, a silicon photodiode integrated with a piezoelectric membrane is studied by Kelvin probe force microscopy (KPFM) under modulated illumination. Time-dependent KPFM enables simultaneous quantification of the surface photovoltage generated
Externí odkaz:
https://doaj.org/article/1ab30092194d4d219a10aa9d53ffea99
Autor:
Zixiong Sun, Sizhao Huang, Wenxuan Zhu, Yorick A. Birkhölzer, Xing Gao, Romar Angelo Avila, Houbing Huang, Xiaojie Lou, Evert P. Houwman, Minh D. Nguyen, Gertjan Koster, Guus Rijnders
Publikováno v:
APL Materials, Vol 11, Iss 10, Pp 101129-101129-8 (2023)
BaTiO3 thin films with different annealing times were grown on LSMO/STO (001) substrates by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the interfacial layer in BaTiO3 was detected in the x-ray diffraction results,
Externí odkaz:
https://doaj.org/article/fdb85368a4454b52b110d7310138675b
Autor:
Binbin Chen, Nicolas Gauquelin, Nives Strkalj, Sizhao Huang, Ufuk Halisdemir, Minh Duc Nguyen, Daen Jannis, Martin F. Sarott, Felix Eltes, Stefan Abel, Matjaž Spreitzer, Manfred Fiebig, Morgan Trassin, Jean Fompeyrine, Johan Verbeeck, Mark Huijben, Guus Rijnders, Gertjan Koster
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Integrating multifunctional oxides on silicon is highly desirable. Here, the authors present asymmetric BaTiO3 superlattices on silicon exhibiting enhanced out-of-plane polarization by harnessing the interfacial strain and broken inversion symmetry.
Externí odkaz:
https://doaj.org/article/c7d710e563254ea8acdebe44644b8b8d
Autor:
Binbin Chen, Nicolas Gauquelin, Robert J. Green, Johan Verbeeck, Guus Rijnders, Gertjan Koster
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
The structural and magnetic properties of LaMnO3/LaFeO3 (LMO/LFO) heterostructures are characterized using a combination of scanning transmission electron microscopy, electron energy-loss spectroscopy, bulk magnetometry, and resonant x-ray reflectivi
Externí odkaz:
https://doaj.org/article/39bfdf74d07e4b2eb2e3556eb1fee41d
Autor:
Matjaž Spreitzer, Dejan Klement, Tjaša Parkelj Potočnik, Urška Trstenjak, Zoran Jovanović, Minh Duc Nguyen, Huiyu Yuan, Johan Evert ten Elshof, Evert Houwman, Gertjan Koster, Guus Rijnders, Jean Fompeyrine, Lior Kornblum, David P. Fenning, Yunting Liang, Wen-Yi Tong, Philippe Ghosez
Publikováno v:
APL Materials, Vol 9, Iss 4, Pp 040701-040701-13 (2021)
Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hind
Externí odkaz:
https://doaj.org/article/f077300c8ed644c9a68dd36479e9078a
Autor:
Yorick A. Birkhölzer, Kai Sotthewes, Nicolas Gauquelin, Lars Riekehr, Daen Jannis, Emma van der Minne, Yibin Bu, Johan Verbeeck, Harold J. W. Zandvliet, Gertjan Koster, Guus Rijnders
Publikováno v:
ACS Applied Electronic Materials, 4(12), 6020-6028. American Chemical Society
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortion
Publikováno v:
Materials, Vol 14, Iss 21, p 6448 (2021)
The dielectric properties, tunability and figure-of-merit (FOM) of relaxor Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and FOM are enh
Externí odkaz:
https://doaj.org/article/0448ba5c8d00480ca8fb921e1ccda59a
Publikováno v:
Applied physics A: Materials science and processing, 129(4):275. Springer
The rapid advent of the piezoelectric microelectromechanical systems (PiezoMEMS) field has created a tremendous demand for low hysteretic piezoelectric thin films on Si. In this work, we present the integration of epitaxial Pb(Mg0.33Nb0.67)O3-PbTiO3