Zobrazeno 1 - 10
of 379
pro vyhledávání: '"Gutmann, R.J."'
Publikováno v:
In Microelectronic Engineering 2007 84(11):2750-2756
Publikováno v:
In Solid State Electronics 2000 44(2):277-301
Publikováno v:
In Solid State Electronics 1999 43(10):1945-1962
P-type GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane as the doping precursor. Hall measurements show that the concentration and mobility of holes in GaSb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6ec6ac9cd79e43b75a84bc72400e76
https://doi.org/10.2172/307975
https://doi.org/10.2172/307975
Publikováno v:
2008 58th Electronic Components & Technology Conference; 2008, p871-878, 8p
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits & Technology Meeting; 2007, p50-53, 4p
Autor:
Losee, P.A., Li, C., Wang, Y., Sharma, S.K., Chow, T.P., Bhat, I.B., Stahlbush, R.E., Gutmann, R.J.
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's; 2007, p97-100, 4p
Publikováno v:
2006 International Conference on Simulation of Semiconductor Processes & Devices; 2006, p345-348, 4p
Publikováno v:
2005 IEEE Annual Conference Wireless & Microwave Technology, 2005; 2005, p125-128, 4p
Publikováno v:
Proceedings ISPSD '05. the 17th International Symposium on Power Semiconductor Devices & ICs, 2005; 2005, p219-222, 4p