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pro vyhledávání: '"Gutierrez, Humberto R."'
Autor:
Dias, Alexandre C., Tromer, Raphael M., Gutiérrez, Humberto R., Galvão, Douglas S., Moujaes, Elie A.
We have investigated the Raman spectrum and excitonic effects of the novel two-dimensional Ta$_2$Ni$_3$Te$_5$ structure. The monolayer is an indirect band gap semiconductor with an electronic band gap value of 0.09 eV and 0.38 eV, determined using GG
Externí odkaz:
http://arxiv.org/abs/2409.16170
Autor:
Jeff, Dylan A., Gonzalez, Favian, Harrison, Kamal, Zhao, Yuzhou, Fernando, Tharindu, Regmi, Sabin, Liu, Zhaoyu, Gutierrez, Humberto R., Neupane, Madhab, Yang, Jihui, Chu, Jiun-Haw, Xu, Xiaodong, Cao, Ting, Khondaker, Saiful I.
Publikováno v:
2D Mater. 10 045030 (2023)
Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase
Externí odkaz:
http://arxiv.org/abs/2306.11905
Autor:
Kim, Un Jeong, Han, Yoojoong, Nugera, Florence A., Yun, Seok Joon, Kim, Seok In, Lee, Moonsang, Gutiérrez, Humberto R., Lee, Young Hee, Son, Hyungbin
Publikováno v:
In Nano Today April 2024 55
Autor:
Sahoo, Prasana K., Memaran, Shahriar, Xin, Yan, Márquez, Tania Díaz, Nugera, Florence Ann, Lu, Zhengguang, Zheng, Wenkai, Zhigadlo, Nikolai D., Smirnov, Dmitry, Balicas, Luis, Gutiérrez, Humberto R.
Publikováno v:
ACS Nano 2019, 13, 11, 12372-12384
Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility
Externí odkaz:
http://arxiv.org/abs/1904.00311
Publikováno v:
Adv. Funct. Mater. 2018, 1802949
Laser-assisted chemical modification is demonstrated on ultra-thin transition-metal dichalcogenides (TMDs), locally replacing selenium by sulfur atoms. The photo-conversion process takes place in a controlled reactive gas environment and the heteroge
Externí odkaz:
http://arxiv.org/abs/1804.10101
Autor:
Xue, Wenjin, Liu, Jiru, Zong, Haonan, Lai, Xiaoyi, Sahoo, Prasana K., Gutierrez, Humberto R., Voronine, Dmitri V.
Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the materials
Externí odkaz:
http://arxiv.org/abs/1711.11164
Autor:
Liu, Jiru, Xue, Wenjin, Zong, Haonan, Lai, Xiaoyi, Sahoo, Prasana K., Gutierrez, Humberto R., Voronine, Dmitri V.
Two-dimensional monolayer transition metal dichalcogenides (TMDs) have unique optical and electronic properties for applications pertaining to field effect transistors, light emitting diodes, photodetectors, and solar cells. Vertical interfacing of W
Externí odkaz:
http://arxiv.org/abs/1711.11166
Publikováno v:
Nature 553 (2018) 63-67
Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling
Externí odkaz:
http://arxiv.org/abs/1706.07014
Akademický článek
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Autor:
Gutiérrez, Humberto R., Perea-López, Nestor, Elías, Ana Laura, Berkdemir, Ayse, Wang, Bei, Lv, Ruitao, López-Urías, Florentino, Crespi, Vincent H., Terrones, Humberto, Terrones, Mauricio
Individual monolayers of metal dichalcogenides are atomically thin two-dimensional crystals with attractive physical properties different from their bulk layered counterpart. Here we describe the direct synthesis of WS2 monolayers with triangular mor
Externí odkaz:
http://arxiv.org/abs/1208.1325