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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy.
Autor:
Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Yu., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K., Preobrazhenskiy, V. V.
Publikováno v:
Semiconductors; Feb2021, Vol. 55 Issue 2, p194-201, 8p