Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Gustaf Winroth"'
Publikováno v:
Microelectronic Engineering. 98:159-162
Pattern collapse is one of the main contributors to photo resist pattern failure in high resolution optical and Extreme Ultra-Violet (EUV) lithography, and becomes progressively more prominent as the feature size is reduced and at smaller pitch. For
Autor:
Franco Cacialli, Sergio Brovelli, Harry L. Anderson, Francesco Meinardi, Kosuke Suzuki, Gustaf Winroth, Giuseppe Sforazzini, Michele Serri
Publikováno v:
Advanced Functional Materials. 22:4284-4291
White electroluminescence and fine-tuning of the emission color from binary blends of a blue-emitting polymer and a green/yellow-emitting threaded molecular wire consisting of a conjugated polymer supramolecularly encapsulated by functionalized cyclo
Autor:
Sergio Brovelli, Adam Tracz, Harry L. Anderson, Francesco Di Stasio, Shane O. McDonnell, Pawel Uznanski, Gustaf Winroth, Platon Korniychuk, Franco Cacialli
Publikováno v:
Advanced Materials. 23:1855-1859
Highly oriented luminescent films are produced by stretching a 30-μm-thick polyvinyl alcohol matrix doped with water-soluble polyrotaxanes and their unthreaded analogues. Photoluminescence experiments reveal that over 95% of the emitted light is pol
Publikováno v:
Journal of Photopolymer Science and Technology. 24:233-238
As advanced lithographical techniques progressively reach denser pitches, pattern collapse becomes increasingly an issue owing to the capillary forces of the receding liquid present at the development and rinse. Process control and development requir
Autor:
Patrick Ong, Wim Bogaerts, Shibnath Pathak, Gunther Sterckx, Christie Delvaux, Dries Van Thourhout, Gayle Murdoch, Weiqiang Xie, Philippe Absil, Gustaf Winroth, S. Locorotondo, Joris Van Campenhout, Guy Lepage, Shankar Kumar Selvaraja, Alexey Milenin
Publikováno v:
SPIE Proceedings.
Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon pho
Publikováno v:
SPIE Proceedings.
With emerging technologies, such as fin-based field-effect transistors (finFETs), the structures, which define the functionality of a device, have added one dimension in the patterning and are now three-dimensional. Lithography for CMOS patterning be
Autor:
Shankar Kumar Selvaraja, Arnaud Rigny, Joris Van Campenhout, Patrick Ong, Gustaf Winroth, Philippe Absil, Wim Bogaerts, Konstantin Bourdelle, Celine Cailler, Dries Van Thourhout, Guy Lepage, Peter De Heyn
Publikováno v:
2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)
OFC
OFC
Using an advanced 300mm CMOS-platform, we report record-low and highly-uniform propagation loss: 0.45 +/- 0.12dB/cm for wires, and 2dB/cm for slot waveguides. For WDM devices, we demonstrate channel variation(3-sigma) within-wafer and within-device o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8959e67a6993fb8051399e9ac813997b
https://biblio.ugent.be/publication/5837163/file/5837168
https://biblio.ugent.be/publication/5837163/file/5837168
Autor:
Kenji Hoshiko, Yusuke Anno, Vassilios Constantoudis, Roel Gronheid, John J. Biafore, Alessandro Vaglio Pret, Todd R. Younkin, Gustaf Winroth
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Process variability in today’s EUV lithography might be a showstopper for features below 27nm dimensions. At these feature sizes, electrical devices are influenced by quantum effects and thus have to face the discrete behavior of light and matter.
Publikováno v:
SPIE Proceedings.
As feature sizes continue to shrink, the discrete nature of light and matter is becoming a significant contributor for the variations observed in lithography in general and for EUVL in particular. Owing to the 15x higher energy of EUV compared to ArF
Publikováno v:
SPIE Proceedings.
In this work we present insights into RLS trade-offs by combining experimental data mining and resist modeling and simulation techniques with a development rate monitor (DRM). A DRM provides experimentally-determined dissolution characteristics for a