Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Gushchina EV"'
Autor:
Shmidt NM; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Shabunina EI; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Gushchina EV; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Petrov VN; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Eliseyev IA; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Lebedev SP; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Priobrazhenskii SI; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Tanklevskaya EM; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Puzyk MV; Faculty of Chemistry, Herzen State Pedagogical University of Russia, 191186 St. Petersburg, Russia., Roenkov AD; Nitride Crystals Group, 194156 St. Petersburg, Russia., Usikov AS; Nitride Crystals Group, 194156 St. Petersburg, Russia., Lebedev AA; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia.
Publikováno v:
Materials (Basel, Switzerland) [Materials (Basel)] 2023 Aug 15; Vol. 16 (16). Date of Electronic Publication: 2023 Aug 15.
Autor:
Shmidt NM; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Usikov AS; Nitride Crystals Group, 27 Pr. Engelsa, 194223 St. Petersburg, Russia.; School of Computer Technologies and Control, ITMO University, Lomonosova St. 9, 191002 St. Petersburg, Russia.; Nitride Crystals, Inc., 181 E Industry Ct., Ste. B, Deer Park, NY 11729, USA., Shabunina EI; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Nashchekin AV; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Gushchina EV; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Eliseev IA; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Petrov VN; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Puzyk MV; Faculty of Chemistry, Herzen State Pedagogical University, 48 Moika Embankment, 191186 St. Petersburg, Russia., Avdeev OV; Nitride Crystals Group, 27 Pr. Engelsa, 194223 St. Petersburg, Russia., Klotchenko SA; Smorodintsev Research Institute of Influenza, Prof. Popov St. 15/17, 197376 St. Petersburg, Russia., Lebedev SP; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Tanklevskaya EM; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Makarov YN; Nitride Crystals Group, 27 Pr. Engelsa, 194223 St. Petersburg, Russia.; Smorodintsev Research Institute of Influenza, Prof. Popov St. 15/17, 197376 St. Petersburg, Russia., Lebedev AA; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Vasin AV; Smorodintsev Research Institute of Influenza, Prof. Popov St. 15/17, 197376 St. Petersburg, Russia.; Institute of Biomedical Systems and Biotechnologies, Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya Str., 195251 St. Petersburg, Russia.
Publikováno v:
Biosensors [Biosensors (Basel)] 2021 Dec 23; Vol. 12 (1). Date of Electronic Publication: 2021 Dec 23.
Autor:
Kotov AS; Vladimirsky Moscow Regional Resaerch Clinical Institute, Moscow, Russia., Gushchina EV; Vladimirsky Moscow Regional Resaerch Clinical Institute, Moscow, Russia., Matiuk YV; Vladimirsky Moscow Regional Resaerch Clinical Institute, Moscow, Russia., Borisova MN; Vladimirsky Moscow Regional Resaerch Clinical Institute, Moscow, Russia., Panteleeva MV; Vladimirsky Moscow Regional Resaerch Clinical Institute, Moscow, Russia., Shatalin AV; Vladimirsky Moscow Regional Resaerch Clinical Institute, Moscow, Russia.
Publikováno v:
Zhurnal nevrologii i psikhiatrii imeni S.S. Korsakova [Zh Nevrol Psikhiatr Im S S Korsakova] 2016; Vol. 116 (9. Vyp. 2), pp. 89-94.
Autor:
Kleider JP; Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jean-paul.kleider@lgep.supelec.fr., Alvarez J, Ankudinov AV, Gudovskikh AS, Gushchina EV, Labrune M, Maslova OA, Favre W, Gueunier-Farret ME, Roca I Cabarrocas P, Terukov EI
Publikováno v:
Nanoscale research letters [Nanoscale Res Lett] 2011 Feb 16; Vol. 6 (1), pp. 152. Date of Electronic Publication: 2011 Feb 16.
Autor:
Huang, Chien-Yu1 (AUTHOR), Li, Hanchen1 (AUTHOR), Wu, Ye2 (AUTHOR), Lin, Chun-Ho1 (AUTHOR), Guan, Xinwei1 (AUTHOR), Hu, Long1 (AUTHOR), Kim, Jiyun1 (AUTHOR), Zhu, Xiaoming1 (AUTHOR), Zeng, Haibo2 (AUTHOR) zeng.haibo@njust.edu.cn, Wu, Tom1 (AUTHOR) tom.wu@unsw.edu.au
Publikováno v:
Nano-Micro Letters. 12/29/2022, Vol. 15 Issue 1, p1-31. 31p.
Publikováno v:
Journal of Computational Electronics; Dec2021, Vol. 20 Issue 6, p2342-2349, 8p
Publikováno v:
Journal of Materials Science: Materials in Electronics; May2019, Vol. 30 Issue 10, p9194-9199, 6p
Autor:
Narchi, Paul, Alvarez, Jose, Chrétien, Pascal, Picardi, Gennaro, Cariou, Romain, Foldyna, Martin, Prod'homme, Patricia, Kleider, Jean-Paul, Cabarrocas, Pere
Publikováno v:
Nanoscale Research Letters; 2/1/2016, Vol. 11 Issue 1, p1-8, 8p
Autor:
Leigh Canham
This handbook updates the most fast-moving research areas of porous silicon research, introduces a range of brand new topics not reviewed before and is even more inclusive of worldwide centres of expertise. Rapid advances are being made in porous sil
